Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Ryu Shimizu

Hayato Nakashima

Mitsuru Okigawa

Tetsuya Miwa

Takashi Noma

Kaori Misawa

Kazuhiro Sasada

Masahiro Oda

Takayuki Kaida

Mamoru Arimoto

Yoshinari Ichihashi

Shun-ichi Kobayashi

This image sensor is so formed as to control at least either the potential of a portion of a transfer channel corresponding to a third electrode or the potential of another portion of the transfer channel corresponding to a fourth electrode to be lower than the potentials of portions of the transfer channel corresponding to a first electrode and a second electrode respectively in a signal charge transferring operation and a signal charge increasing operation.

Image sensor and sensor unit

A solid-state image sensor capable of suppressing color mixture while suppressing increase of load capacitances of transfer gates and a short circuit between two adjacent transfer gates is provided. This solid-state image sensor comprises a plurality of transfer gates and a shielding material line blocking light incident from above a prescribed pixel upon another pixel adjacent to the prescribed pixel. The shielding material line has a downward projecting portion on a region corresponding to at least one transfer gate entering an ON-state in photoreception.

Solid-state image sensor

An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.

An imaging device includes a first electrode for generating an electric field storing signal charges, a charge multiplication section for multiplying the stored signal charges, a second electrode for generating the electric field in the charge multiplication section, a voltage conversion portion for converting the signal charges into a voltage, a third electrode for transferring the signal charges to the voltage conversion portion, provided between the first electrode and the voltage conversion portion, wherein the second electrode is provided on a side opposite to the third electrode and the voltage conversion portion with respect to the first electrode.

Imaging device including a multiplier electrode

This image sensor includes a charge increasing portion for increasing the quantity of charges, a first electrode for applying a voltage regulating a region adjacent to the charge increasing portion to a prescribed potential, a second electrode provided adjacently to the first electrode for applying another voltage increasing the quantity of charges in the charge increasing portion, a first wire formed on a prescribed layer for supplying a signal to the first electrode and a second wire formed on a layer different from the prescribed layer for supplying another signal to the second electrode.

Image sensor comprising multilayer wire

A solid-state image pickup device improvable in photosensitivity also in the vicinity of an end of a substrate is provided. This solid-state image pickup device comprises a photodetection part formed on a substrate, a color filter layer and a lens, formed between the substrate and the color filter for condensing light on the photodetection part, having a lens center deviated from the center of the photodetection part by a prescribed distance.

Solid state image pickup device comprising lenses for condensing light on photodetection parts

A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.

Semiconductor device

A solid-state imaging apparatus allowing miniaturization in a structure having a lens provided between a substrate and a color filter layer is provided. This solid-state imaging apparatus comprises a photodetection part formed on the substrate, the color filter layer formed on the substrate and the lens formed between the substrate and the color filter layer for concentrating light on the photodetection part. The lens has an upwardly projecting upper surface portion, while the upper end of the upper surface portion substantially comes into contact with the lower surface of the color filter layer.

Solid-state imaging apparatus

When forming the interconnect trench by 'via first' method of the dual damascene process, after providing a via hole in the interlayer dielectric film, the anti-reflection coatingand the resist layerare formed such that whichever has a faster etching rate in the formation process of the interconnect trench, out of the anti-reflection coatingand the resist layer, is disposed at the same level as a bottom portion of the interconnect trench to be formed through the formation process thereof.

Method of manufacturing a semiconductor device including a multi-layer interconnect structure

A lift-off method for fine patterning includes the steps of: applying a photoresist layer to a substrate; implanting ions into predetermined regions in a surface layer of the photoresist layer; irradiating the photoresist layer with ultraviolet from above; developing the photoresist layer to form a resist pattern for lift-off; depositing a desired material with a predetermined thickness from above the resist pattern; and removing the resist pattern, thereby lifting off the material on the resist pattern, whereby a fine pattern of the desired material is left on the substrate.

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Mizuho, Japan

Ryu Shimizu