Kabushiki Kaisha Toshiba

Ryu Kato

Yoshio Ozawa

Junichi Shiozawa

Isao Kamioka

Masaru Kito

Ryota Katsumata

Mitsuru Sato

Katsuyuki Sekine

Takashi Nakao

Keisuke Nakazawa

Takeshi Hoshi

Tetsuya Kai

Kazuaki Iwasawa

Shogo Matsuo

Soichiro Kitazaki

According one embodiment, a nonvolatile semiconductor memory device, includes: a stacked body, and each of a plurality of electrode layers and each of a plurality of insulating layers being stacked alternately in the a stacked body; a first interlayer insulating film on the stacked body; a gate electrode on the first interlayer insulating film; a second interlayer insulating film on the gate electrode; a semiconductor layer extended from an upper end of the second interlayer insulating film to a lower end of the stacked body; a first insulating film between the semiconductor layer and each of the plurality of electrode layers; and a second insulating film between the semiconductor layer and the gate electrode, a thickness of the semiconductor layer provided above an upper end of the gate electrode being thicker than a thickness of the semiconductor layer provided below the upper end of the gate electrode.

Nonvolatile semiconductor memory device and method for manufacturing same

In one embodiment, a method of manufacturing a semiconductor device includes forming a conductive film whose upper surface and side surface are exposed and an insulation film whose upper surface is exposed, on a semiconductor substrate. The method further includes supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the exposed side surface of the conductive film and the exposed upper surface of the insulation film, by applying a predetermined voltage to the semiconductor substrate, thereby performing anisotropic oxidation or anisotropic nitridation of the exposed side surface of the conductive film and the exposed upper surface of the insulation film.

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.

A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches.

Semiconductor device manufacturing method and silicon oxide film forming method

Growing community of inventors

Yokohama, Japan

Ryu Kato