Fuji Electric Co., Ltd.

Ryu Araki

Michio Tamate

Miwako Fujita

Tamiko Asano

Yuhei Suzuki

Soichi Yoshida

Hiroshi Miyata

Tadanori Yamada

Shigeki Sato

Hiroki Katsumata

Takashi Kaimi

Yuta Sunasaka

Bao Cong Hiu

Toshiyuki Matsui

A semiconductor apparatus includes: a power semiconductor element; a control chip including a plurality of terminals including a first terminal and a second terminal, and being configured to control the power semiconductor element using a power supply voltage supplied to the second terminal; a first conductor for supplying a predetermined control voltage to the first terminal; a first line for supplying the power supply voltage to the second terminal; and semiconductor chip including a diode that is used for a bootstrap operation for generating the power supply voltage. The semiconductor chip includes: a semiconductor substrate: including a first face and a second face that are opposed to each other; and having a PN junction of the diode formed by a p-type semiconductor region on the first face and an n-type semiconductor region on the second face, an anode formed on the first face and joined to a surface of the first conductor, and a cathode formed on the second face and electrically connected to the second terminal via the first line.

Semiconductor apparatus and semiconductor chip

A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The bidirectional diode unit may be arranged between the anode pad and the cathode pad on the front surface.

Semiconductor device

A semiconductor device including: a semiconductor substrate; a temperature sensing unit provided on a front surface of the semiconductor substrate; an anode pad and a cathode pad electrically connected with the temperature sensing unit; a front surface electrode being set to a predetermined reference potential; and a bidirectional diode unit electrically connected in a serial bidirectional way between the cathode pad and the front surface electrode is provided. The output comparison diode unit may be arranged between the anode pad and the cathode pad. The temperature sensing unit may include a temperature sensing diode, and the output comparison diode unit may include a diode connected in inverse parallel to the temperature sensing diode.

Semiconductor device and system

A power module, including a high-side switching element and a low-side switching element connected to form a half bridge circuit, a high-side drive circuit which drives the high-side switching element, a low-side drive circuit which drives the low-side switching element, and a high-side current detection circuit which detects a current of the high-side switching element. The high-side drive circuit includes a high-side variable delay circuit which adjusts, according to a value detected by the high-side current detection circuit, a length of a high-side delay time from a time when a signal is inputted to the high-side drive circuit to a time when the high-side switching element is driven.

Power module with built-in drive circuits

The electromagnetic noise of a semiconductor device is conveniently evaluated, and the electromagnetic noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method is provided which includes causing one of a first device and a second device of a semiconductor device to perform a switching operation, the semiconductor device comprising the first device and second device connected in series and a third device and a fourth device connected to each other in series and connected parallel to a series circuit of the first device and second device; measuring voltage variation occurring between the third device and the fourth device during the switching operation; and outputting an evaluation benchmark for electromagnetic noise of the semiconductor device, based on the voltage variation.

Evaluation method, estimation method, evaluation apparatus, and combined evaluation apparatus

The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method including: making a semiconductor device that is connected parallel to a load by a load cable, perform a switching operation; measuring common-mode current flowing through the load cable during the switching operation; and outputting an evaluation benchmark for radiated noise based on the common-mode current, and an evaluation apparatus are provided.

Evaluation method, combined evaluation method, evaluation apparatus, and combined evaluation apparatus

The radiated noise of a semiconductor device is conveniently evaluated, and the radiated noise of an apparatus equipped with the semiconductor device is estimated. An evaluation method and an evaluation apparatus are provided, including: causing a semiconductor device to perform a switching operation; measuring voltage variation occurring between main terminals of the semiconductor device during the switching operation; and outputting an evaluation benchmark for radiated noise of the semiconductor device based on the voltage variation. The outputting the evaluation benchmark may include calculating the voltage variation in the semiconductor device for each frequency component as the evaluation benchmark.

A power module including a half bridge circuit having first and second switching elements respectively included in an upper arm and a lower arm thereof, and upper and lower arm drive circuits which respectively drive the first and second switching elements. The power module includes a first ground terminal on a ground side of the second switching element, a second ground terminal connected, via a first ground wiring, to the first ground terminal, a third ground terminal connected, via a second ground wiring including a dumping resistor, to the first ground terminal, a current detection circuit detecting a current flowing through the second switching element, and a control ground switching circuit which performs switching according to a value of the current detected by the current detection circuit, so as to connect a ground terminal of the lower arm drive circuit to the second or third ground terminal.

Power module with built-in drive circuit

A semiconductor device having a switch circuit and an integrated circuit. The switch circuit includes serially-connected first and second switching devices respectively on a power supply side and a ground side thereof, and first and second free-wheeling diodes connected respectively in parallel with the first and second switching devices. The integrated circuit performs switching of the second switching device, and including a detection circuit that detects a load current flowing through a load of the switch circuit, and a drive circuit that controls magnitude of a current flowing to the gate terminal of the second switching device, to thereby charge a gate capacitance of the second switching device according to a detection result of the detection circuit, when a received drive signal is at one logic level, and turns off the second switching device when the received drive signal is at another logic level.

Integrated circuit and semiconductor device

There is provided a semiconductor device capable of decreasing a switching loss. The semiconductor device has first semiconductor elements (Su)-(Sw) and second semiconductor elements (Sx)-(Sz) connected in series, in which the first semiconductor element includes a low switching loss semiconductor element having a switching loss which is smaller than a switching loss of the second semiconductor element and the second semiconductor element includes a low conduction loss semiconductor element having a conduction loss which is smaller than a conduction loss of the first semiconductor element.

Semiconductor device having a decreased switching loss

A switching element driving device for driving first and second switching elements of a half bridge circuit, the first and second switching elements being respectively formed in upper and lower arm units of the half bridge, and having respectively first and second freewheeling diodes connected thereto in antiparallel. The switching element driving device includes upper and lower arm driving circuits respectively configured to output first and second driving signals for driving the first and second switching elements, and a drive capability decision circuit configured to, responsive to turning on of the first switching element, set drive capability of the first driving signal to a first level and to change the drive capability of the first driving signal to a second level upon detecting a reverse recovery current of the second freewheeling diode of the second switching element, the first level being higher than the second level.

Switching element driving device

A multi-phase power device for driving an inductive load includes a first semiconductor device and a second semiconductor device connected in series in each of three phase arms. Each first semiconductor device includes a first switching device made of a wide-bandgap semiconductor and a freewheeling diode that is made of a narrow-bandgap semiconductor and is connected in anti-parallel to the first switching devices. Each second semiconductor device includes a second switching devices made of a wide-bandgap semiconductor and a freewheeling diode connected in anti-parallel to the second switching device.

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Matsumoto, Japan

Ryu Araki