Translucent, Inc.

Iqe Plc

Other

Rytis Dargis

Andrew C Clark

Michael S Lebby

Erdem Arkun

Rodney Pelzel

Robin G Smith

Patrick Chin

Richard Hammond

Radek Roucka

Nam Pham

Howard Williams

Robert Yanka

David Lothele Williams

Rich Hammond

Mukul Debnath

Wang Nang Wang

Andrew Clark

A layered structure including a substrate in [100] crystal orientation, a crystalline bixbyite oxide layer in [111] orientation, and a metal-containing layer crystallographically matched to the crystalline bixbyite oxide layer. Also a method of fabricating a layered structure comprising steps to: epitaxially deposit a crystalline bixbyite oxide in [111] orientation on a substrate in [100] crystal orientation; and deposit a metal-containing layer on the crystalline bixbyite oxide layer.

Structure and method using a single crystalline bixbyite oxide layer in a orientation

Layered structures described herein include electronic devices with 2-dimensional electron gas between polar-oriented cubic rare-earth oxide layers on a non-polar semiconductor. Layered structure includes a semiconductor device, comprising a III-N layer or rare-earth layer, a polar rare-earth oxide layer grown over the III-N layer or rare-earth layer, a gate terminal deposited or grown over the polar rare-earth oxide layer, a source terminal that is deposited or epitaxially grown over the layer, and a drain terminal that is deposited or grown over the layer.

Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor

Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. Specifically, the substrate may include a porous portion, which is usually aligned with the metal layer, with or without a rare earth oxide layer in between.

Integrated epitaxial metal electrodes

A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.

Pnictide nanocomposite structure for lattice stabilization

In view of the high-temperature issues in III-N layer growth process, embodiments described herein use layered structure including a rare earth oxide (REO) or rare earth nitride (REN) buffer layer and a polymorphic III-N-RE transition layer to transit from a REO layer to a III-N layer. In some embodiments, the piezoelectric coefficient of III-N layer is increased by introduction of additional strain in the layered structure. The polymorphism of RE-III-N nitrides can then be used for lattice matching with the III-N layer.

III-N to rare earth transition in a semiconductor structure

Systems and methods are described herein for growing epitaxial metal oxide as buffer for epitaxial III-V layers. A layer structure includes a base layer and a first rare earth oxide layer epitaxially grown over the base layer. The first rare earth oxide layer includes a first rare earth element and oxygen, and has a bixbyite crystal structure. The layer structure also includes a metal oxide layer epitaxially grown directly over the first rare earth oxide layer. The metal oxide layer includes a first cation element selected from Group III and oxygen, and has a bixbyite crystal structure.

Epitaxial metal oxide as buffer for epitaxial III-V layers

Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.

A structure can include a III-N layer with a first lattice constant, a first rare earth pnictide layer with a second lattice constant epitaxially grown over the III-N layer, a second rare earth pnictide layer with a third lattice constant epitaxially grown over the first rare earth pnictide layer, and a semiconductor layer with a fourth lattice constant epitaxially grown over the second rare earth pnictide layer. A first difference between the first lattice constant and the second lattice constant and a second difference between the third lattice constant and the fourth lattice constant are less than one percent.

Pnictide buffer structures and devices for GaN base applications

Systems and methods describe growing RE-based integrated photonic and electronic layered structures on a single substrate. The layered structure comprises a substrate, an epi-twist rare earth oxide layer over a first region of the substrate, and a rare earth pnictide layer over a second region of the substrate, wherein the first region and the second region are non-overlapping.

Re-based integrated photonic and electronic layered structures

Proposed is a layer structure () comprising a crystalline piezoelectric III-N layer () epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (). The rare earth oxide layer includes at least two discrete portions (), and the metal layer includes at least one metal portion () that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (), particularly suitable for RF filters.

Epitaxial AIN/cREO structure for RF filter applications

Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride

The structures and methods disclosed herein include changing composition of a metal alloy layer in an epitaxial electrode material to achieve tunable work functions for the electrode. In one example, the tunable work function is achieved using a layered structure, in which a crystalline rare earth oxide (REO) layer is epitaxially over a substrate or semiconductor, and a metal layer is over the crystalline REO layer. A semiconductor layer is thus in turn epitaxially grown over the metal layer, with a metal alloy layer over the semiconductor layer such that the ratio of constituents in the metal alloy is used to tune the work function of the metal layer.

Metal electrode with tunable work functions

Systems and methods described herein may include a first semiconductor layer with a first lattice constant, a rare earth pnictide buffer epitaxially grown over the first semiconductor, wherein a first region of the rare earth pnictide buffer adjacent to the first semiconductor has a net strain that is less than 1%, a second semiconductor layer epitaxially grown over the rare earth pnictide buffer, wherein a second region of the rare earth pnictide buffer adjacent to the second semiconductor has a net strain that is a desired strain, and wherein the rare earth pnictide buffer may comprise one or more rare earth elements and one or more Group V elements. In some examples, the desired strain is approximately zero.

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Fremont, CA, United States of America

Rytis Dargis