Denki Kagaku Kogyo Kabushiki Kaisha

Denka Company Limited

Adv Antest Corporation

Ryozo Nonogaki

Yoshinori Terui

Tomohiro Nomiyama

Hideki Hirotsuru

Takuya Okada

Akira Miyai

Masahiro Ibukiyama

Yukihiko Nakajima

Hiroshi Yasuda

Yusuke Takeda

Takamasa Satoh

Masayoshi Ichikawa

Yoshihisa Ooae

Takeshi Haraguchi

Suzuya Yamada

Masahide Kaneko

Go Takeda

Yasuo Imamura

Toshiyuki Morishita

Shunsuke Mitani

Seiichi Sakawa

Mitsuru Kawagoe

Kosuke Wada

Fumihiro Nakahara

Hiroshi c/o Advantest Corporation Yasuda

Yoshihisa c/o Advantest Corporation Ooae

Takeshi c/o Advantest Corporation Haraguchi

Takamasa c/o Advantest Corporation Satoh

The present invention is directed to provide a hydrophobized phosphor not susceptible to separation at the interface with sealing resins and, by using this hydrophobized phosphor, a light-emitting device having excellent long-term stability and little change in luminance and emission color over time. The hydrophobized phosphor is characterized in that it comprises phosphor particles represented by the general formula SiAlON:Eu(where z is larger than 0 and no more than 4.2); and a surface layer consisting of a hydrophobic substance deposited on the surfaces of the phosphor particles; wherein the hydrophobic substance consists of a long-chain fatty acid having 12 or more carbon atoms, a silicone oil having a viscosity of 1.5 Pa&#xb7;s or less, or a combination thereof. The light-emitting device is characterized in that it comprises the hydrophobized phosphor and a light-emitting element.

Hydrophobized phosphor and light-emitting device

Provided is a method for producing a phosphor, using a nitride raw material, that gives a high-reliability (Sr,Ca)AlSiN-based nitride phosphor at a productivity higher than before. The method comprises a mixing step of mixing raw materials and a calcining step of calcining the mixture obtained in the mixing step and, in producing the phosphor having a crystalline structure substantially identical with that of (Sr,Ca)AlSiNcrystal as the host crystal, a strontium nitride containing SrN, SrN, or the mixture thereof as the main crystalline phase, as determined by crystalline phase analysis by powder X-ray diffractometry, and having a nitrogen content of 5 to 12 mass % is used as part of the raw materials.

Method for producing phosphor

Provided are an &#x3b1;-SiAlON activated by Eu, which can realize a higher luminance in a light-emitting device such as a white LED, and also a light-emitting device. The &#x3b1;-SiAlON is represented by the general formula: (M)(Eu)(Si)(Al)(O)(N)(wherein M denotes one or more elements including at least Ca, selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (except for La and Ce)), and is constituted by an &#x3b1;-SiAlON having Eu in the form of a solid solution. The 50% mean area diameter of primary particles of the &#x3b1;-SiAlON is 5 &#x3bc;m or more, and the ratio of the 50% mean area diameter of primary particles to the 50% mean area diameter of secondary particles of the &#x3b1;-SiAlON is preferably 0.56 or more. A light-emitting deviceincludes a light-emitting light sourceand a wavelength conversion member, wherein the wavelength conversion memberincludes a &#x3b1;-SiAlONfor absorbing near-ultraviolet to blue light generated by the light-emitting light sourceto generate yellow to orange light.

&#x3b1;-SiAlON, light-emitting device and use thereof

Provided are an electron source which allows a high-angle current density operation even at a low extraction voltage, and reduces excess current that causes vacuum deterioration; and an electronic device using the electron source. The electron source has a cathode composed of single-crystal tungsten, and a diffusion source provided in the intermediate portion of the cathode. In the cathode, the angle between the axial direction of the cathode and &#x3c;100&#x3e; orientation of the cathode is adjusted so that electrons to be emitted from the vicinity of the boundary between surface and surface formed on the tip of the cathode, are emitted substantially parallel to the axis of the cathode. The electronic device is provided with the electron source.

Electron source having a tungsten single crystal electrode

Provided is an electron source which outputs a stable electron beam even when vibration is applied from the external to an apparatus which uses the electron source. The electron source is provided with an insulator (); two conductive terminals () arranged at an interval on the insulator (); a long filament () stretched between the conductive terminals (); and a needle-like cathode () having an electron emitting section attached to the filament (). The vertical cross-section shape of the filament () in the axis direction has a long direction and a short direction, and the maximum length in the long direction is 1.5 times or more but not more than 5 times the maximum length in the short direction.

Electron source and electron beam apparatus

Provided is an electron source which provides a stable electron beam even when vibration is applied from external to a device which uses the electron source. The electron source is provided with a needlelike chip () having an electron emitting section at one end; a cup-like component () bonded to the other end of the needlelike chip (); and a filament () for heating the cup-like component (). The filament () is arranged in a gap inside the cup-like component (), in a noncontact state to the cup-like component ().

Electron source

An electron source producing an electron beam which is highly reliable and stable even when it is externally oscillated. The electron source comprises a cathode () having an electron emitting section which is so connected to be interposed between top ends of two filaments () which are respectively connected to two conductive pins () provided on an insulator member (), an end of the cathode () which differs from the electron emitting section being fixed to the insulator member (), wherein the two filaments () are being twofold symmetry with a center on a center axis of the cathode (), and preferably, the end of the cathode () which differs from the electron emitting section is fixed to the insulator member () via a metallic member () brazed to the insulator member, and more preferably, a curved portion is provided to the filaments.

An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB) or cerium hexaboride (CeB). The electron emission restrictive region may be covered with carbon.

Electron gun, electron beam exposure apparatus, and exposure method

A highly pure ultra-fine SiOx (wherein x is from 0.6 to 1.8) powder having a specific surface area of at least 10 m/g and a total content of Na, Fe, Al and Cl of at most 10 ppm is provided. The SiOx powder is produced by reacting a monosilane gas with a gas capable of oxidizing the monosilane gas in a non-oxidizing gas atmosphere under a pressure of from 10 to 1000 kPa at a temperature of from 500 to 1000&#xb0; C. In this case, the amount of the non-oxidizing gas is preferably larger than the total amount of the monosilane gas and oxygen participating in the oxidation of the gas capable of oxidizing the monosilane gas.

Highly pure ultra-fine SiOx powder and method for production thereof

To provide an electron source to be used for a surface analyzer such as a scanning or transmission electron microscope or an Auger electron spectroscope, or an electron beam lithography machine, particularly for a semiconductor wafer inspection apparatus such as a scanning electron microscope to be used at a low acceleration with an electron beam acceleration voltage of up to 1 kV, CD SEM or DR SEM. An electron source wherein a barium supplying source consisting of a complex oxide comprising barium oxide and an oxide of metal other than barium, is provided at a portion of a single crystal needle of tungsten or molybdenum.

A substrate for mounting an electronic component, includes a baseplate having a main surface formed with or without a recess. A ceramic substrate is provided on the main surface of the baseplate and has a smaller size than the baseplate. A metal layer is provided to cover both of the baseplate and the ceramic substrate. The metal layer has a surface remote from the baseplate and the ceramic substrate is made flat, the baseplate is made of a metal-ceramic composite of a metallic material and a ceramic material, and the metallic material in the composite and the metal layer have different compositions. Thus, an integral ceramic circuit board, which is resistant to repeated thermal stress and is superior in reliability can be realized.

Method for producing an integral ceramic circuit board

A substrate for mounting an electronic component, including a baseplate having a main surface formed with or without a recess. A ceramic substrate is provided on the main surface of the baseplate and has a smaller size than the baseplate. A metal layer is provided to cover both of the baseplate and the ceramic substrate. The metal layer has a surface remote from the baseplate and the ceramic substrate is made flat, the baseplate is made of a metal-ceramic composite of a metallic material and a ceramic material, and the metallic material in the composite and the metal layer have different compositions. Thereby, an integral ceramic circuit board, which is resistant to repeated thermal stress and is superior in reliability, can be realized.

Growing community of inventors

Shibukawa, Japan

Ryozo Nonogaki