Nissan Motor Company Limited

Renault S.a.s.

Ryouta Tanaka

Tetsuya Hayashi

Wei Ni

Toshiharu Marui

Shigeharu Yamagami

Yuichi Iwasaki

Keiichiro Numakura

Keisuke Takemoto

A semiconductor device includes a main groove formed in a main surface of a substrate, a semiconductor region formed in contact with a surface of the main groove, an electron supply region formed in contact with a surface of the semiconductor region on opposite sides of at least side surfaces of the main groove to generate a two-dimensional electron gas layer in the semiconductor region, and a first electrode and a second electrode formed in contact with the two-dimensional electron gas layer and apart from each other.

Semiconductor device

A semiconductor device includes: a drift region that is arranged on a main surface of a substrate, and has a higher impurity concentration than the substrate; a first well region that is connected to the drift region; and a second well region that is arranged adjacent to the first well region and faces the drift region. The second well region has a higher impurity concentration than the first well region. A distance between the source region that faces the drift region via the first well region and the drift region is greater than a distance between the second well region and the drift region, in a direction parallel to the main surface of the substrate. A depletion layer extending from the second well region reaches the drift region.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Kanagawa, Japan

Ryouta Tanaka