Hitachi, Ltd.

Ryouji Oritsuki

Akira Sasano

Hideaki Taniguchi

Hirofumi Suzuki

Shinji Matsumoto

Katsuhiko Yarita

Sakae Someya

Ryuuzoh Nashimoto

Masateru Wakui

Hirofumi Kunitou

There are disclosed various types of TFT active matrix liquid crystal display devices and method of fabrication thereof in which a pixel is divided into three parts, a capacitor is added to each pixel, light shielding is applied to each TFT, and the matrix is driven by a DC cancelling technique.

TFT active matrix liquid crystal display devices

Liquid crystal display device including thin film transistors having gate electrodes completely covering the semiconductor

TFT active matrix LCD devices employing two superposed conductive films having different dimensions for the scanning signal lines

There are disclosed various types of TFT active matrix liquid crystal display devices in which a pixel is divided into three parts, a capacitor is added to each pixel, light shielding is applied to each TFT, and the matrix is driven by a DC cancelling technique.

TFT active matrix liquid crystal display devices with two layer gate

There are disclosed various types of TFT active matrix liquid crystal display devices in which a pixel is divided into three, a capacitor is added to each pixel, light shielding is applied to each TFT, and the matrix is drived by a DC cancelling technique.

TFT active matrix liquid crystal display with gate lines having two

TFT active matrix liquid crystal display devices with a holding

TFT active matrix liquid crystal display devices with plural TFTs in

An active matrix liquid crystal device is provided with improved external terminal structures including an ITO (indiumtin-oxide) pad covering an interconnection wiring, and a layout of a passivation film for protecting an aluminium wiring from outer moisture.

Multi-layer external terminals of liquid crystal displays with thin-film

There is disclosed a liquid crystal color display of the active matrix type. A method of fabricating the display is initiated by depositing a transparent conductive material of indium tin oxide (ITO) as a thin layer onto a glass plate. Then chromium is deposited as an opaque film onto the ITO layer. The two layers are selectively removed, using a first mask pattern. A layer of an insulator consisting of Si.sub.3 N.sub.4 is deposited on the laminate within a reducing atmosphere of plasma. An I-type amorphous silicon layer is formed on the insulator layer. A highly doped N-type amorphous silicon layer is then formed. The N-type silicon layer, the I-type silicon layer, and the silicon nitride layer are selectively removed. An aluminum layer is formed on the laminate and then selectively etched away. Finally, the chromium layer is selectively etched away to form gates, gate leads, pixel electrodes, sources, drains and drain leads.

Method for manufacturing a liquid crystal display device with

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Shirako-machi, Japan

Ryouji Oritsuki