Denso Corporation

Nippondenso Co., Ltd.

Ryouichi Kubokoya

Akira Kuroyanagi

Yasuo Souki

Yasushi Tanaka

Hirohito Shioya

Yuji Ichikawa

Shigemitsu Fukatsu

On a TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si--H bonds is reduced.

Semiconductor device employing silicon nitride layers with varied

The insulating ability of a semiconductor device of two-layer gate electrode structure, such as EPROM, is improved at the upper surface of the first gate electrode as well as at the upper and lower edge parts of the first gate electrode. A LOCOS film is formed on a semiconductor substrate, and a floating gate is formed by patterning. Next, the first oxide film is formed on the floating gate, and then the first oxide film is etched out. Subsequently, the second oxide film is formed on the floating gate, and a control gate is formed on the floating gate using the second oxide film as an inter-layer insulating film. As a result of these two oxidations of the first and second oxide films and the removal of the first oxide film, the asperity of the upper surface of the floating gate is removed, and the upper and lower edge parts thereof are shaped into a round form.

Manufacturing method for semiconductor device

On TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si-H bonds is reduced.

Method of forming silicon nitride with varied hydrogen concentration

Growing community of inventors

Okazaki, Japan

Ryouichi Kubokoya