Sakai Display Products Corporation

Ryouhei Takakura

Nobutake Nodera

Takao Matsumoto

Yoshiaki Matsushima

Shigeru Ishida

Satoru Utsugi

Kazuki Kobayashi

Taimi Oketani

There are provided a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a pixel having a first thin film transistor and a drive circuit having a second thin film transistor and driving the pixel, wherein a first channel region of the first thin film transistor and a second channel region of the second thin film transistor are configured to have different electrical characteristics (for example, electron mobility, thereby enabling the first thin film transistor and the second thin film transistor to function suitably for the each role thereof).

Display apparatus and method of manufacturing display apparatus

Provided are a thin film transistor having properties properly adjusted by adjusting crystallinity of a polycrystalline silicon, and a method of manufacturing the same. The silicon layer functioning as a channel layer of a TFT comprises an amorphous part, a first polycrystalline part and a second polycrystalline part. The first and second polycrystalline parts are formed by irradiating the silicon layer with laser beams (energy beams) through the mask comprising the shielding part for shielding the energy beams, the first transmission part for transmitting the energy beams and the second transmission part for transmitting the energy beams at a transmittance lower than that of the first transmission part. By the presence of the second polycrystalline part, properties of the TFT such as an electron mobility are properly adjusted. Further, properties of the TFT can be adjusted easily by adjusting the configuration of the mask.

Thin film transistor and method of manufacturing thin film transistor

A method of manufacturing a thin film transistor including: forming a gate electrode on a substrate, forming an insulating film, forming a first silicon layer including an amorphous silicon, irradiating a region of the first silicon layer from a part or the whole of a predetermined region of the first silicon layer to an outside of the predetermined region with an energy beam so as to convert a portion of the first silicon layer into a polycrystalline silicon, a first etching step for etching the first silicon layer while leaving the predetermined region, forming a second silicon layer including an amorphous silicon so as to cover the predetermined region, a second etching step for etching the second silicon layer covering the predetermined region while leaving a part of the second silicon layer, the part larger than the predetermined region, and forming a source electrode and a drain electrode.

Method of manufacturing thin film transistor and thin film transistor

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Osaka, Japan

Ryouhei Takakura