Tokyo Electron Limited

Ryou Son

Naoki Matsumoto

Masahiko Tomita

Masayuki Kohno

Toshiharu Nishimura

Yusuke Yoshida

Mitsuhiro Okada

Satoshi Takagi

Jun Yoshikawa

Yamato Tonegawa

Koji Koyama

Kota Umezawa

Michitaka Aita

Takahiro Senda

Ippei Shimizu

Ryouhei Satou

Yuichi Kuwahara

Syuntaro Tawaraya

Masami Sudayama

Yukiyoshi Aramaki

A plasma processing apparatus includes a processing vessel, an upper structure that is provided on an upper portion of the processing vessel and generates plasma in a lower region thereof, a structure holding ring that is fixed around the upper structure, an arm that supports the ring and is movable up and down, a screw (including a bolt) that is fixed to one of the ring and the arm, and has a tip end abutting the other, and a pin that is provided in the ring or the arm, and passes through a hole for restricting horizontal movement of the ring.

Plasma processing apparatus

A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion.

A temperature measuring method for measuring a temperature of a member corresponding to a measuring object arranged within a chamber of a plasma processing apparatus is provided. The temperature measuring method involves obtaining a function (f) for correcting a correction target temperature (T) according to a measurement window temperature (T), the function (f) being computed based on the correction target temperature (T) corresponding to a temperature of the measuring object measured via a measurement window arranged at the chamber, a reference temperature (T) corresponding to a temperature of the measuring object measured without using the measurement window, and the measurement window temperature (T) corresponding to a temperature of the measurement window. The temperature measuring method further involves measuring the correction target temperature (T), measuring the measurement window temperature (T), and correcting the correction target temperature (T) according to the measurement window temperature (T) based on the obtained function (f).

Temperature measuring method and plasma processing system

A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.

Semiconductor processing apparatus and method for using same

A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

Film formation apparatus and method for using the same

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Miyagi, Japan

Ryou Son