Toto Ltd.

Ryoto Takizawa

Hiroaki Ashizawa

Takuma Wada

Toshihiro Aoshima

Junichi Iwasawa

Yasutaka Nitta

Yuuki Takahashi

Atsushi Kinjo

Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus as well as a semiconductor manufacturing apparatus. A composite structure including a base material and a structure that is provided on the base material and has a surface to be exposed to a plasma atmosphere, in which the structure has an yttrium-aluminum oxide as a main component, and has a lattice constant a calculated by the following formula (1) being larger than 12.080 Å:·()  (1)where d represents a lattice plane spacing, and (hkl) represents a Miller index. This structure features excellent low-particle generation and is suitably used a member for a semiconductor apparatus.

Composite structure and semiconductor manufacturing apparatus including composite structure

According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a first surface, a second surface crossing the first surface, and an edge portion connecting the first surface and the second surface. The particle-resistant layer includes a polycrystalline ceramic and covering the first surface, the second surface, and the edge portion. The particle-resistant layer includes a first particle-resistant layer provided at the edge portion, and a second particle-resistant layer provided at the first surface. A particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer.

Semiconductor manufacturing apparatus

Disclosed is to provide a composite structure used as a member for a semiconductor manufacturing apparatus with which low-particle generation can be improved, as well as a semiconductor manufacturing apparatus including the same. A composite structure including a base material and a structure that is provided on the base material and has a surface, in which the structure comprises YAlOas a main component, and has an indentation hardness being larger than 8.5 GPa features excellent low-particle generation and is suitably used as a member for a semiconductor apparatus.

Disclosed is provision of a ceramic coat having an excellent low-particle generation as well as a method for assessing the low-particle generation of the ceramic coat. A composite structure including a substrate and a structure which is formed on the substrate and has a surface, wherein the structure includes a polycrystalline ceramic and the composite structure has luminance Sa satisfying a specific value calculated from a TEM image analysis thereof, can be suitably used as an inner member of a semiconductor manufacturing apparatus required to have a low-particle generation.

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Kitakyushu, Japan

Ryoto Takizawa