Tohoku University

Semiconductor Technology Academic Research Center

Ryotaro Yagi

Junichi Koike

Noriyoshi Shimizu

Masaki Yoshimaru

Koji Arita

Yoshito Fujii

Jun Iijima

Kazuyoshi Maekawa

A multilevel interconnect structure in a semiconductor device and methods for fabricating the same are described. The multilevel interconnect structure in the semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere.

Semiconductor device having a multilevel interconnect structure and method for fabricating the same

A multilevel interconnect structure in a semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere.

Growing community of inventors

Hamamatsu, Japan

Ryotaro Yagi