Rohm Co., Ltd.

Nec Corporation

Sanyo Electric Co., Ltd.

Rohn Co., Ltd.

Ryotaro Yagi

Isamu Nishimura

Shinichi Chikaki

Yoshinori Shishida

Yuichi Nakao

Takahisa Yamaha

Shinya Yamazaki

Kazuo Kohmura

Hirofumi Tanaka

A semiconductor device is disclosed. The semiconductor device includes an insulating layer formed selectively on a semiconductor layer; a lower electrode, formed on the insulating layer, having an end portion at a position spaced apart by a predetermined distance inward from a periphery of the insulating layer; a dielectric film formed on the lower electrode; an upper electrode, formed on the dielectric film, facing the lower electrode with the dielectric film interposed between the upper electrode and the lower electrode; and a passivation film, formed to cover the insulating layer, starting from the end portion of the lower electrode and extending toward the periphery of the insulating layer. The passivation film includes an insulating material having an etching selectivity with respect to the insulating layer.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device capable of improving a mechanical strength of a porous silica film while inhibiting a film located on a lower layer of the porous silica film from deterioration is obtained. This semiconductor device includes an organic film formed on a semiconductor substrate, an ultraviolet light permeation suppressive film, formed on a surface of the organic film, composed of a material which is difficult to be permeable by ultraviolet light, and a first porous silica film formed on a surface of the ultraviolet light permeation suppressive film.

Semiconductor device and method of fabricating the same

The semiconductor device according to the present invention includes a semiconductor layer, a trench formed by digging the semiconductor layer from the surface thereof, a gate insulating film formed on the inner surface of the trench, and a gate electrode made of silicon embedded in the trench through the gate insulating film. The gate electrode has a high-conductivity portion formed to cover the gate insulating film with a relatively high conductivity and a low-conductivity portion formed on a region inside the high-conductivity portion with a relatively low conductivity.

The semiconductor device according to the present invention includes a lower electrode made of a metallic material, a capacitance film made of an insulating material and laminated on the lower electrode, an upper electrode made of a metallic material, opposed to the lower electrode through the capacitance film, and having an outline smaller than that of the lower electrode in plan view along the opposed direction, and a protective film made of the same material as that of the capacitance film and laminated on the upper electrode.

Semiconductor device and method of manufacturing the same

A semiconductor device capable of preventing an interlayer dielectric film from deterioration resulting from a liquid such as a chemical solution penetrating into the interlayer dielectric film and recovering the interlayer dielectric film from deterioration with a prescribed gas is obtained. This semiconductor device comprises a first insulating film formed on a substrate and a first gas-liquid separation film, formed on at least a part of the surface of the first insulating film, composed of a material hardly permeable by a liquid and easily permeable by a gas.

Semiconductor device comprising insulating film

An insulating layer is formed on a semiconductor substrate, and has a through hole for via. A porous silica layer has a trench for interconnection communicating to the through hole for via, and is formed on the insulating layer in contact therewith. A conductive layer is formed in the through hole for via and in the trench for interconnection. The insulating layer is formed from a material containing carbon, hydrogen, oxygen, and silicon, and having absorption peak attributed to Si&#x2014;CHbond in a range from at least 1260 cmto at most 1280 cm(around 1274 cm) when measured with FT-IR. Thus, a semiconductor device having a porous insulating layer in which depth of the trench for interconnection is readily controlled, a dielectric constant is low, and increase in leakage current is less likely, as well as a manufacturing method thereof can be obtained.

Growing community of inventors

Kyoto, Japan

Ryotaro Yagi