Fuji Electric Co., Ltd.

Ryotaro Tsuruoka

Ryoichi Kato

Yuma Murata

Yuichiro Hinata

Takashi Saito

A method for manufacturing a semiconductor device includes obtaining a shear stress Fat which that a value obtained by dividing a loss elastic modulus by a storage elastic modulus equals 1 for each of a plurality of candidate heat conductive greases at each of a plurality of temperatures that are within a prescribed control temperature range determined based on an operation temperature range of the semiconductor device to be manufactured; selecting a heat conductive grease, among the plurality of candidate heat conductive greases, that has a value of Fof 100 Pa or more and 200 Pa or less at each of the plurality of the temperatures within the prescribed control temperature range; and attaching a resin sealed body that includes a semiconductor element mounted on a laminated substrate therein to a cooler via the heat conductive grease that has been selected in the selecting.

Manufacturing method of semiconductor device

A power semiconductor module includes an insulating circuit substrate; a printed circuit board disposed over the insulating circuit substrate; and a plurality of terminals each having a rod-shaped portion and including a first protrusion and a second protrusion each protruding laterally form a side face of the rod-shaped portion; wherein at least one of the plurality of terminals is inserted to one of the through-holes of the printed circuit board and is locked to the one of the through-holes via the first protrusion, and wherein at least another one of the plurality of terminals is inserted to another one of the through-holes of the printed circuit board and is locked to said another one of the through-holes via the second protrusion, and an end of the at least another one of the plurality of terminals is electrically connected to a conductive plate on the insulating circuit substrate.

Growing community of inventors

Nagano, Japan

Ryotaro Tsuruoka