Tokyo Electron Limited

Ryota Yonezawa

Takamichi Kikuchi

A method for depositing a film on a substrate disposed in a processing chamber includes repeating a cycle. The cycle includes a precursor step and a reactant step, and may include purge steps. A reductant step is performed during at least a portion of the cycle. The precursor step includes exposing the substrate to a precursor gas to form an intermediate film from the precursor gas at the substrate. The precursor gas may be a metal halide gas, such as titanium tetrachloride gas. The reactant step includes exposing the substrate to a reactant gas to chemically react with the intermediate film to form the film. The reactant gas may be a hydronitrogen gas having at least two nitrogen atoms, such as hydrazine gas. The reductant step includes exposing the substrate to a reductant gas, such as a gas containing hydrogen, like hydrogen gas.

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Albany, NY, United States of America

Ryota Yonezawa