Nissan Motor Company Limited

Renault S.a.s.

Ulvac, Inc.

Ryota Tanaka

Tetsuya Hayashi

Wei Ni

Toshiharu Marui

Keiichiro Numakura

Keisuke Takemoto

Yasuaki Hayami

Toyoaki Nakajima

Tsutomu Yuri

Yujirou Kurokawa

Shigeharu Yamagami

Yuichi Iwasaki

Yuujirou Kurokawa

Shuji Yoshida

Jiro Endo

Hitomi Obise

A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is a first or a second conductive layer, along a surface normal direction of a side surface of the trench, while forming dielectric layers between a conductive layer closest to the side surface of the trench and the side surface of the trench, and between the corresponding conductive layers; and removing the first conductive layer and the dielectric layer, which are formed on a bottom portion of the trench, to electrically connect the second conductive layer to the semiconductor substrate at the bottom portion of the trench. After a portion of the first main surface, the portion being outside of the trench, is covered with an insulating protective film, the first conductive layer and the dielectric layer are removed.

Semiconductor device, power module and manufacturing method for the semiconductor device

A semiconductor device includes: a substrate having a groove formed on a main surface; a drift region of a first conductivity type, the drift region having a portion disposed at a bottom part; a well region of a second conductivity type, the well region being disposed in one sidewall to be connected to the drift region; a first semiconductor region of the first conductivity type, the first semiconductor region being disposed on a surface of the well region in the sidewall to be away from the drift region; a second semiconductor region of the first conductivity type, the second semiconductor region being disposed to be opposed to the well region via the drift region; and a gate electrode opposed to the well region, the gate electrode being disposed in a gate trench that has an opening extending over the upper surfaces of the well region and the first semiconductor region.

Semiconductor device and method for manufacturing same

A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes: a substrate; a source region formed on a main surface of the substrate; a well region electrically connected to the source region; a drift region in contact with the well region; a drain region in contact with the drift region; a first electrode electrically connected to the source region; a second electrode electrically connected to the drain region; a third electrode formed in contact with the source region, the well region, and the drift region through an insulating film; and a parasitic capacitance reduction region formed in contact with the source region and in contact with the third electrode through the insulating film and having a higher resistance value than that of the source region.

A semiconductor device includes: a conductive semiconductor substrate in which a trench is formed on the first main surface; a plurality of conductive layers, each of which is either a first conductive layer or a second conductive layer, which are laminated on one another along a surface normal direction of a side surface of the trench; and dielectric layers arranged between a conductive layer closest to the side surface of the trench among the plurality of conductive layers and the side surface of the trench, and between the plurality of corresponding conductive layers. The first conductive layer is electrically insulated from the semiconductor substrate, and the semiconductor substrate that electrically connects to the second conductive layer inside the trench electrically connects to the second electrode.

Semiconductor device, power module and method for manufacturing the semiconductor device

A semiconductor device includes: a drift region of a first conductive type including a contact section and extension sections extending along the main surface of a substrate; column regions of a second conductive type which alternate with the extension sections in a perpendicular direction to the extension direction of the extension sections and each includes an end connecting to the contact section; a well region of a second conductive type which connects to the other end of each column region and tips of the extension sections; and electric field relaxing electrodes which are provided above at least some of residual pn junctions with an insulating film interposed therebetween. Herein, the residual pn junctions are pn junctions other than voltage holding pn junctions formed in interfaces between the extension sections and the column regions.

Semiconductor device and manufacturing method thereof

A semiconductor device includes: a substrate (); a semiconductor layer () disposed on a main surface of this substrate (); and a first main electrode () and a second main electrode (), which are disposed on the substrate () separately from each other with the semiconductor layer () sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer () includes: a first conductivity-type drift region () through which a main current flows; a second conductivity-type column region () that is disposed inside the drift region () and extends in parallel to a current path; and an electric field relaxation region () that is disposed in at least a part between the drift region () and the column region () and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.

Semiconductor device and method for manufacturing the same

A semiconductor device includes: a substrate; a drift region disposed on a principal surface of the substrate; a first well region extending from a second principal surface of the drift region in a direction perpendicular to the second principal surface and having a bottom portion; a second well region being in contact with the bottom portion and disposed at a portion inside the substrate located below the bottom portion; and a source region extending in a perpendicular direction from a region of the second principal surface provided with the first well region, and reaching the second well region. In a direction parallel to the second principal surface and oriented from a source electrode to a drain electrode, a distance of the second well region in contact with a gate insulating film is shorter than a distance of the first well region in contact with the gate insulating film.

A semiconductor device includes: a gate electrode groove formed in contact with a drift region, a well region, and a source region; a gate electrode formed on a surface of the gate electrode groove via an insulating film; a source electrode groove in contact with the gate electrode groove; a source electrode electrically connected to a source region; and a gate wiring electrically insulated from the source electrode and formed inside the source electrode groove in contact with the gate electrode.

Semiconductor device

A semiconductor device includes: a substrate; a drift region formed on a main surface of the substrate; a well region formed in a main surface of the drift region; a source region formed in the well region; a gate groove formed from the main surface of the drift region in a perpendicular direction while being in contact with the source region, the well region, and the drift region; a drain region formed in the main surface of the drift region; a gate electrode formed on a surface of the gate groove with a gate insulating film interposed therebetween; a protection region formed on a surface of the gate insulating film facing the drain region; and a connection region formed in contact with the well region and the protection region.

Semiconductor device with well region and protection region electrically connected by connection region

A quadrupole mass spectrometer for use in analyzing gas components in a test piece is made in a constitution in which resistance heating of a grid is materialized, and in which a high-accuracy analysis of the gas components is possible at a low cost while preventing the sensitivity from lowering. A quadrupole mass spectrometer is provided with a sensor section which can be detachably fitted to the test piece. Supposing that the direction of fitting the sensor section to the test piece is in an upward direction, the sensor section is provided with: a predetermined shape of supporting body which is provided at a lower end of the sensor section; an ion source which is provided on the supporting body and which has a filament and a grid for ionizing the gas; a quadrupole section which is provided on the ion source and in which four columnar electrodes are disposed at a predetermined circumferential distance from one another; and an ion detection section which is disposed on the quadrupole section and which collects predetermined ions that have passed through the quadrupole section by applying DC and AC voltages between opposite electrodes.

Quadrupole mass spectrometer

A mass spectrometry unit of the present invention includes a mass spectrometry portion that detects ion current values of a gas to be measured according to mass-to-charge ratio, to thereby measure partial pressures of the gas to be measured. The mass spectrometry unit further includes: a control portion for preliminary storing a record of a mass-to-charge ratio of a specific gas that decreases a function of a specific portion of the mass spectrometry unit, in which if an ion current value with the mass-to-charge ratio of the specific gas detected by the mass spectrometry portion is not less than a predetermined value, the control portion outputs a warning signal denoting a functional decrease in the specific portion.

Mass spectrometry unit

A method of controlling a mass spectrometer comprises the steps of: supplying a current to a cathode electrode of an ion source having the cathode electrode and an anode electrode, and ionizing a molecules of a gas to be measured; selecting ions generated in the ion source by mass-to-charge ratio; and detecting an ion current value of the selected ions. When a partial pressure of the gas to be measured is measured based on a detection result of the ion current value, a cathode current is supplied to the cathode electrode such that an emission current flowing between the cathode electrode and the anode electrode becomes constant. When a partial pressure of the gas to be measured is not measured, a constant current having a current value less than that of the cathode current is supplied to the cathode electrode.

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Kanagawa, Japan

Ryota Tanaka