Kioxia Corporation

Kabushiki Kaisha Toshiba

Ryota Narasaki

Takayuki Ishikawa

Satoshi Nagashima

Kazuhiro Matsuo

Shinji Mori

Kenichiro Toratani

Takeichiro Nishikawa

Yuta Saito

Natsuki Fukuda

Hiroyuki Yamashita

Daiki Kiribuchi

Kota Takahashi

Yefei Han

Tomoki Ishimaru

Yuta Kamiya

Satoru Yokota

Soh Koike

Yusuke Shimada

Ha Hoang

Takashi Kurusu

Takafumi Ochiai

Junichi Kaneyama

Weili Cai

Shoji Honda

A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

Semiconductor storage device

A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.

An optimization apparatus includes an output data acquirer to acquire output data expressing a result of experiment or simulation based input parameters, input/output data storage to store the input parameters and the output data corresponding to the input parameters, as a pair, an evaluation value calculator to calculate evaluation values of the output data, an input parameter converter to generate conversion parameters of a dimension number changed from the dimension number of the input parameters, a next-input parameter decider to decide next input parameters based on pairs of the conversion parameters and the evaluation values corresponding to the conversion parameters, and a repetition determiner to repeat operations of the output data acquirer, the input/output data storage, the evaluation value calculator, the input parameter converter, and the next-input parameter decider, until satisfying a predetermined condition.

Optimization apparatus, simulation system and optimization method for semiconductor design

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Kawasaki, Japan

Ryota Narasaki