Denso Corporation

Ryota Miwa

Takuo Nagase

Hiroshi Ishino

Shoichiro Omae

Emika Abe

A semiconductor device includes a semiconductor element configured to form an upper-lower arm circuit of a power conversion device. The semiconductor element includes a control electrode, a high-potential electrode and a low-potential electrode. A parasitic capacitance between the control electrode and the high-potential electrode changes according to a potential difference between the high-potential electrode and the low-potential electrode. A value of the parasitic capacitance at a time when the potential difference is equal to 80 percent of a breakdown voltage of the semiconductor element is defined as a first capacitance value. An arbitrary value of the parasitic capacitance at a time when the potential difference is in an inclusive range of 20 percent to 40 percent of the breakdown voltage is defined as a second capacitance value. The first capacitance value is larger than the second capacitance value.

Semiconductor device

A semiconductor module includes: a semiconductor element having a first main electrode and a second main electrode; a first conductive member and a second conductive member connected to the first main electrode and the second main electrode, respectively, and placed to sandwich the semiconductor element; and a main terminal including a first main terminal continuous from the first conductive member and a second main terminal continuous from the second conductive member. The main terminal has a facing portion, a non-facing portion, a first connection portion, and a second connection portion. In a width direction, a formation position of the second connection portion overlaps with a formation position of the first connection portion.

Growing community of inventors

Kariya, Japan

Ryota Miwa