Nitto-denko Corporation

Ryota Mita

Tomoaki Ichikawa

Yuki Sugo

Mayu Shimoda

The present invention is a laminate including a base sheet and a metal particle-containing layer laminated on the base sheet, and including metal particles. The base sheet has a contact surface in contact with the metal particle-containing layer, and a Young's modulus of the base sheet at 23° C., which is obtained by measuring the contact surface using a nano-indentation method, is 0.01 to 10 GPa.

Laminate

To provide a sheet for sintering bonding and the same with a base material suited for lamination and integration and also suited for realizing satisfactory operational efficiency in a sintering process in a process of producing semiconductor devices that go through sintering bonding of semiconductor chips. A sheet for sintering bondingof the present invention comprises an electrically conductive metal containing sinterable particle and a binder component. In this sheet, the minimum load, reached during an unloading process in load-displacement measurement according to a nanoindentation method, is &#x2212;100 to &#x2212;30 &#x3bc;N. Alternatively, the ratio of the minimum load to a maximum load, reached during a load applying process in the above measurement, is &#x2212;0.2 to &#x2212;0.06. A sheet body X, a sheet for sintering bonding with a base material of the present invention, has a laminated structure comprising a base material B and the sheet

Sheet for sintering bonding and sheet for sintering bonding with base material

To provide a wound body of a sheet for sintering bonding with a base material that realizes a satisfactory operational efficiency in a process of producing a semiconductor device comprising sintering bonding portions of semiconductor chips and that also has both a satisfactory storage stability and a high storage efficiency. A wound bodyaccording to the present invention has a form in which a sheet for sintering bonding with a base material X is wound around a winding coreinto a roll shape, the sheet for sintering bonding with a base material X having a laminated structure comprising: a base material; and a sheet for sintering bonding, comprising an electrically conductive metal containing sinterable particle and a binder component.

Wound body of sheet for sintering bonding with base material

A manufacturing method includes the step of forming a diced semiconductor wafer () including semiconductor chips () from a semiconductor wafer (W) typically on a dicing tape (T). The diced semiconductor wafer () on the dicing tape (T) is laminated with a sinter-bonding sheet (). The semiconductor chips () each with a sinter-bonding material layer () derived from the sinter-bonding sheet () are picked up typically from the dicing tape (T). The semiconductor chips () each with the sinter-bonding material layer are temporarily secured through the sinter-bonding material layer () to a substrate. Through a heating process, sintered layers are formed from the sinter-bonding material layers () lying between the temporarily secured semiconductor chips () and the substrate, to bond the semiconductor chips () to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to individual semiconductor chips while reducing loss of the sinter-bonding material.

Manufacturing method for semiconductor device

A semiconductor device manufacturing method includes a preparation step and a sinter bonding step. In the preparation step, a sinter-bonding work having a multilayer structure including a substrate, semiconductor chips, and sinter-bonding material layers is prepared. The semiconductor chips are disposed on, and will bond to, one side of the substrate. Each sinter-bonding material layer contains sinterable particles and is disposed between each semiconductor chip and the substrate. In the sinter bonding step, a cushioning sheet having a thickness of 5 to 5000 &#x3bc;m and a tensile elastic modulus of 2 to 150 MPa is placed on the sinter-bonding work, the resulting stack is held between a pair of pressing faces, and, in this state, the sinter-bonding work between the pressing faces undergoes a heating process while being pressurized in its lamination direction, to form a sintered layer from each sinter-bonding material layer.

A manufacturing method includes the step of laminating a sheet assembly onto chips arranged on a processing tape, where the sheet assembly has a multilayer structure including a base and a sinter-bonding sheet and is laminated so that the sinter-bonding sheet faces the chips, and subsequently removing the base B from the sinter-bonding sheet. The chips on the processing tape are picked up each with a portion of the sinter-bonding sheet adhering to the chip, to give sinter-bonding material layer-associated chips. The sinter-bonding material layer-associated chips are temporarily secured through the sinter-bonding material layer to a substrate. The sinter-bonding material layers lying between the temporarily secured chips and the substrate are converted through a heating process into sintered layers, to bond the chips to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to semiconductor chips while reducing loses of the sinter-bonding material.

The sinter-bonding composition contains sinterable particles containing an electroconductive metal. The average particle diameter of the sinterable particles is 2 &#x3bc;m or less and the proportion of the particles having a particle diameter of 100 nm or less in the sinterable particles is not less than 80% by mass. The sinter-bonding sheet () has an adhesive layer made from such a sinter-bonding composition. The dicing tape with a sinter-bonding sheet (X) has such a sinter-bonding sheet () and a dicing tape (). The dicing tape () has a lamination structure containing a base material () and an adhesive layer (), and the sinter-bonding sheet () is positioned on the adhesive layer () of the dicing tape ().

Growing community of inventors

Ibaraki, Japan

Ryota Mita