Mitsubishi Electric Corporation

Ryota Hamaguchi

Yasushi Nakayama

Shuichi Nagamitsu

A semiconductor module parallel circuit includes: a plurality of power semiconductor modules; and a multilayer substrate that interconnects the plurality of power semiconductor modules, each of the power semiconductor modules includes: a power semiconductor switching element; a first signal terminal connected to a gate potential of the power semiconductor switching element; and a second signal terminal connected to a source potential of the power semiconductor switching element, the multilayer substrate includes: an external connection terminal; first signal terminal connection patterns connected to the first signal terminals of the power semiconductor modules; and second signal terminal connection patterns connected to the second signal terminals of the power semiconductor modules, and inductances of gate wiring for the plurality of power semiconductor modules, from the external connection terminal to the first signal terminal connection pattern and from the second signal terminal connection pattern to the external connection terminal are equal to one another.

Semiconductor module parallel circuit and semiconductor module connection substrate

A wiring member to electrically connect a positive direct-current terminal and an alternating-current terminal to each other, the positive direct-current terminal being formed in a semiconductor element module, the alternating-current terminal being formed in a semiconductor element module, a positive potential being applied to the positive direct-current terminal, a positive potential and a negative potential being appropriately applied to the alternating-current terminal, the wiring member including an insulative partition formed on the wiring member, the insulative partition being upright so as to block the line of sight between the positive direct-current terminal and the alternating-current terminal.

Growing community of inventors

Tokyo, Japan

Ryota Hamaguchi