Toshiba Memory Corporation

Kioxia Corporation

Ryota Asada

Masayuki Akou

Hidenobu Nagashima

Shingo Nakajima

According to one embodiment, a semiconductor device includes a substrate, an interconnect layer, a layer stack, and a first silicon nitride layer. The interconnect layer includes a transistor provided on the substrate and a first interconnect electrically coupled to the transistor and is provided above the transistor. The layer stack is provided above the interconnect layer and includes conductive layers stacked with an insulation layer interposed between two of conductive layers of each pair of conductive layers. The first silicon nitride layer is provided between the interconnect layer and the layer stack.

Growing community of inventors

Kuwana, Japan

Ryota Asada