Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Ryosuke Yamamoto

Naoko Kihara

Seiji Morita

Yoshiyuki Kamata

Norikatsu Sasao

Akiko Yuzawa

Takeshi Okino

Hiroyuki Hieda

Ryuichi Saito

Koji Asakawa

Tomoyuki Maeda

Yasuaki Ootera

Hiroki Tanaka

Shinobu Sugimura

Shinichi Ito

Akira Kikitsu

Takuya Shimada

Tomoaki Sawabe

Yoshiaki Kawamonzen

Ryoichi Suzuki

Soichi Inoue

Masatoshi Sakurai

Akira Watanabe

Takashi Sato

Toshiro Hiraoka

Kazuyo Umezawa

Sumio Ashida

Yoshiyuki Ishizawa

Yusuke Kasahara

Katsuya Sugawara

Takeharu Motokawa

Masahiro Kanamaru

Ayaka Suko

A method for manufacturing a metal fluoride-containing organic polymer film includes forming an organic polymer film on a base body. The method includes exposing the organic polymer film to an organometallic compound containing a first metal, thereby infiltrating the organic polymer film with the organometallic compound. The method includes exposing the organic polymer film infiltrated with the organometallic compound to hydrogen fluoride, thereby providing a fluoride of the first metal in the organic polymer film.

Method for manufacturing metal fluoride-containing organic polymer film, patterning method, and method for manufacturing semiconductor device

A pattern formation method includes forming an organic film on a substrate, processing the organic film to form an organic film pattern, exposing the organic film pattern to an organic gas, and exposing the organic film pattern to a metal-containing gas, and after (i) exposing the organic film pattern to the organic gas and (ii) exposing the organic film pattern to the metal-containing gas, treating the organic film pattern with an oxidizing agent.

Pattern formation method and method of manufacturing semiconductor device

A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.

Pattern forming material and pattern forming method

In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes housing the substrate provided with the first film in a chamber, and introducing a first gas into the chamber. The method further includes generating plasma discharge of the first gas in the chamber or applying radiation to the first gas in the chamber. The method further includes introducing a second gas containing a metal component into the chamber to cause the metal component to infiltrate into the first film after the generation of the plasma discharge or the application of the radiation is started.

Method of manufacturing semiconductor device and semiconductor manufacturing apparatus

In one embodiment, a pattern forming method includes forming a first film on a substrate. The method further includes supplying energy to the first film to form a first region to which the energy have been supplied, and a second region including at least a region to which the energy has not been supplied. The method further includes impregnating at least the first region out of the first and second region with metal atoms. The method further includes developing the first film after impregnating the first region with the metal atoms to remove the second region while leaving the first region.

Pattern forming method and method of manufacturing semiconductor device

A pattern-forming method includes forming a first film above a material to be processed, processing the first film into a pattern to be formed in the material to be processed, providing a second film on the first film and the material to be processed, supplying a precursor containing at least one of a metal material or a semiconductor material to the second film, removing the first film, and processing the material to be processed using the second film impregnated with at least one of the metal material and the semiconductor material, as a mask.

Pattern-forming method

According to one embodiment, a substrate processing apparatus comprises a chamber for a substrate that has a target film thereon. The apparatus includes a first gas introducing unit to introduce a precursor gas into the chamber, a second gas introducing unit that introduces a etching gas for etching the target film into the chamber, and a controller configured to control the first gas introducing unit and the second gas introducing unit to cause the first gas and the second gas to be alternately introduced to the chamber.

Substrate processing apparatus, substrate processing method, and semiconductor device fabrication method

A template defect inspection method using an optical system includes emitting linearly polarized light to a template having a metal film formed on at least part of a concave-convex structure that is formed on a substrate and that has a line-and-space pattern, acquiring information on a polarization-rotated component, which is different from linearly polarized light incident on the template, of light reflected by the template in accordance with the emission thereto, converting the acquired information on the polarization-rotated component into an electrical signal, and processing the electrical signal.

Template defect inspection method

A pattern formation method according to an embodiment includes providing a substrate in which protrusions each having a tapered shape are provided on a main surface. The method further includes supplying the main surface with spherical particles equal in diameter to make the spherical particles arrange in a triangular lattice form such that each of the protrusions is at least partially positioned within a region surrounded by the main surface and three of the spherical particles adjacent to one another.

Self-organization material and pattern formation method

A pattern forming method includes forming a coating film containing a hydrophilic first homopolymer having a first bonding group and a hydrophobic second homopolymer having a second bonding group capable of bonding with the first bonding group, forming a bond between the first and second bonding group to produce a block copolymer of the first and second homopolymers, and heating the coating film to microphase-separating the copolymer into a hydrophilic domain and a hydrophobic domain. The hydrophilic and hydrophobic domains are arranged alternately. The bond is broken, then selectively dissolving-removing either domain by a solvent to provide a polymer pattern of a remainder domain.

Pattern forming method

A stamper of an embodiment includes: a base portion having a main surface; and a plurality of guides arranged on the main surface in mutually different first and second directions and serving as references of arrangement of a plurality of self-assembled dots. A distance between the guides in a third direction is within a range of an integer m&#xb1;0.05 times of a pitch of the plural self-assembled dots. The third direction corresponds to a third vector obtained by combining a first vector corresponding to the arrangement of the guides in the first direction and a second vector corresponding to the arrangement of the guides in the second direction. A distance between the plural guides in the first direction falls out of a range of an integer m&#xb1;0.15 times of the pitch of the plural self-assembled dots.

Stamper and method of manufacturing bit patterned medium using stamper

A self-assembled pattern forming method in an embodiment includes: forming a guide pattern on a substrate; forming a layer of a first polymer; filling a first block copolymer; and phase-separating the first block copolymer. The guide pattern includes a first recessed part having a depth T and a diameter D smaller than the depth T, and a second recessed part having a width larger than double of the diameter D. The first block copolymer has the first polymer and a second polymer which are substantially the same in volume fraction. By phase-separating the first block copolymer, a cylinder structure and a lamellar structure are obtained.

Self-assembled pattern forming method

In one embodiment, a method of manufacturing a mold includes: forming a first layer having an affinity to a second polymer on a substrate having an affinity to a first polymer; forming first and second openings in the first layer; filling a resist in the second openings and hardening the resist to obtain a hardened resist; and forming a second layer containing a block copolymer and causing it to self-assemble.

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Kawasaki, Japan

Ryosuke Yamamoto