Shin-etsu Chemical Co., Ltd.

Ryosuke Taniguchi

Masaki Ohashi

Takayuki Fujiwara

Tomohiro Kobayashi

Koji Hasegawa

Masayoshi Sagehashi

Satoshi Watanabe

Masahiro Fukushima

Naoya Inoue

Youichi Ohsawa

Takayuki Nagasawa

Takeru Watanabe

Tsunehiro Nishi

Teppei Adachi

Ryo Mitsui

Yoshio Kawai

Kazuhiro Katayama

Katsuhiro Kobayashi

Kenji Funatsu

Takeshi Nagata

Akihiro Seki

Kenji Yamada

Kazuya Honda

Takahiro Suzuki

Eiji Fukuda

Yoshinori Matsui

A resist composition is provided comprising (A) a sulfurane or selenurane compound, (B) an organic solvent, and (C) a base polymer comprising repeat units having an acid labile group. By virtue of the acid diffusion inhibitory function of the compound, the resist composition forms a resist pattern having improved LWR and CDU when it is processed by lithography using high-energy radiation.

Resist composition and pattern forming process

An onium salt having a partial structure of formula (A) is provided wherein Rand Rare hydrogen or a C-Chydrocarbyl group in which hydrogen may be substituted by halogen and —CH— may be replaced by —O— or —C(═O)—, both Rand Rare not hydrogen at the same time, Rand Rmay bond together to form an aliphatic ring. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.

Onium salt, chemically amplified negative resist composition, and pattern forming process

An onium salt containing an anion having formula (A1) and a cation having formula (A1-a), (A1-b) or (A1-c) is provided. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.

A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and/or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition. 

Resist composition and patterning process

A chemically-amplified negative resist composition includes: (A) a quencher containing an onium salt shown by the following formula (A-1); (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2); and (C) a photo-acid generator which generates an acid. Thus, the present invention provides: a negative resist composition which can form a favorable profile with high sensitivity and low LWR and CDU in a pattern; and a resist patterning process using the composition. 

An epoxy compound of formula (1) is provided. A resist composition comprising the epoxy compound is capable of adequately controlling the diffusion length of acid generated from an acid generator without sacrificing sensitivity. 

Epoxy compound, resist composition, and pattern forming process

A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.

Sulfonium compound, resist composition, and patterning process

A polymer comprising units having a highly fused homoadamantane skeleton at side chain end bonded to the polymer backbone via a linking group has an appropriate solvent solubility and is capable of suppressing acid diffusion. A resist composition comprising the polymer and a specific photoacid generator exhibits a good DOF margin, CD uniformity, and a minimal CD change during PPD, and is quite effective in precise micropatterning.

A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on &#x3b3;-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.

Resist composition, pattern forming process, polymer, and monomer

A sulfonium compound having formula (1) exerts a satisfactory acid diffusion control function wherein R, Rand Rare a C-Cmonovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved resolution, LWR, MEF and CDU. 

Sulfonium compound, making method, resist composition, and pattern forming process

On use of a sulfonium salt of specific structure as PAG, acid diffusion is suppressed. A resist composition comprising the sulfonium salt forms a pattern with improved lithography properties including EL, MEF and LWR when processed by lithography.

Sulfonium salt, resist composition, and patterning process

A sulfonium compound having formula (1) is provided wherein R, Rand Rare a C-Cmonovalent hydrocarbon group which may contain a heteroatom, p=0-5, q=0-5, and r=0-4. A resist composition comprising the sulfonium compound is processed by lithography to form a resist pattern with improved LWR and pattern collapse. 

Sulfonium compound, resist composition, and pattern forming process

A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.

A polymer for resist use is obtainable from a hemiacetal compound having formula (1) wherein Ris H, CHor CF, Rto Reach are H or a monovalent hydrocarbon group, Xis a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k=0 or 1, and k=0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments. 

Hemiacetal compound, polymer, resist composition, and patterning process

An onium salt having an anion moiety of a specific structure is an effective photoacid generator. A resist composition comprising the onium salt has the advantages of compatibility and reduced acid diffusion and forms a pattern with a good balance of sensitivity and MEF, rectangularity, and minimal defects.

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Joetsu, Japan

Ryosuke Taniguchi