The Furukawa Electric Co., Ltd.

Fuji Electric Co., Ltd.

Furukawa Automotive Systems Inc.

Square Enix Co., Ltd.

Ryosuke Tamura

Keishi Takaki

Jiang Li

Kazuyuki Umeno

Tatsuyuki Shinagawa

Shusuke Kaya

Hiroshi Harada

Yoshihiro Ikura

Masayuki Iwami

Hirotatsu Ishii

Takuya Kokawa

Takezo Sugimura

Shinya Ootomo

Ryohei Makino

Kaoru Sugimoto

Eri Maruyama

Takahiro Fujii

Haruko Yamazaki

Toshiaki Tarumi

Shinya Otomo

A power conversion device converting and outputting a characteristic of input power, includes: a power conversion unit including a normally-on type first switching element made of a nitride-based semiconductor material and converting the characteristic of power by a switching operation performed by the first switching element; an operation control unit controlling a switching operation of the first switching element; and an intelligent power switch including: a second switching element provided on a power input side of the power conversion unit and turning on/off power input to the power conversion unit; and a protection control unit including a current detection unit detecting a current flowing in the second switching element and controlling on/off of the second switching element and turn off the second switching element in a case where a current detected by the current detection unit exceeds a threshold value.

Power conversion device with protection device and method of controlling the same

A nitride semiconductor device includes; a semiconductor stack configured with a plurality of semiconductor layers made of nitride semiconductors provided on a base having a conductive portion; a first electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack; a second electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack separately from the first electrode; a first wiring provided at an upper layer of the first electrode; and a second wiring provided at an upper layer of the second electrode. A low permittivity area being a portion of which permittivity is lower than permittivities of the nitride semiconductors configuring the semiconductor stack at a lower layer of a portion of at least one of the first electrode and the second electrode other than a portion being junctioned with the semiconductor stack electrically.

Nitride semiconductor device, production method thereof, diode, and field effect transistor

A semiconductor multi-layer substrate includes a substrate made of Si and a multi-layer semiconductor layer. The multi-layer semiconductor layer includes an active layer made of a nitride semiconductor, a first warp control layer being formed between the substrate and the active layer and giving a predetermined warp to the substrate, and a second warp control layer made of a nitride semiconductor of which amount of an increase in a warp per a unit thickness is smaller than an amount of increase in the warp per a unit thickness of the first warp control layer. A total thickness of the multi-layer semiconductor layer is equal to or larger than 4 &#x3bc;m.

Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the same

A semiconductor multi-layer substrate includes a substrate, a buffer layer formed on the substrate and made of a nitride semiconductor, an electric-field control layer formed on the buffer layer and made of a nitride semiconductor, the electric-field control layer having conductivity in the substrate's lateral direction, an electric-field relaxation layer formed on the electric-field control layer and made of a nitride semiconductor, and an active layer formed on the electric-field relaxation layer and made of an nitride semiconductor. A resistance in the substrate's lateral direction of the electric-field control layer is equal to or smaller than 10 times a resistance of the electric-field relaxation layer, and a ratio of an electric field share between the electric-field relaxation layer and the buffer layer is controlled by a ratio between a thickness of the electric-field relaxation layer and a thickness of the buffer layer.

Semiconductor multi-layer substrate and semiconductor element

A semiconductor device includes: a first semiconductor layer formed on a substrate and formed of a nitride-based semiconductor; a second semiconductor layer formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer; first and second electrodes formed on a surface of the second semiconductor layer; an inter-electrode insulator film that is formed between the first and second electrodes on the surface of the second semiconductor layer; and a dielectric constant adjustment layer formed on the inter-electrode insulator film and formed of an electric insulator. The first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and the dielectric constant adjustment layer has a first layer that contacts a lateral end portion of the field plate portion and a second layer formed on the first layer.

Semiconductor device

An object of the present invention is to provide a game apparatus that can display an avatar matched to any kind of game in which the avatar participates, without changing clothes or decorations worn by the avatar to new clothes or decorations. The game apparatus specifies display data of items based on attributes set to the items and includes a design table where a correspondence relationship between the attributes and the display data of the items is set. Display data of the player character is generated based on the specified display data of the items, and the player character is displayed on a display screen based on the generated display data of the player character.

Avatar useable in multiple games that changes appearance according to the game being played

Growing community of inventors

Tokyo, Japan

Ryosuke Tamura