Central Glass Company, Limited

Takasago International Corporation

Ryosuke Sawamura

Akifumi Yao

Tadahiro Hiramoto

Hiroyuki Oomori

Shoi Suzuki

Taichi Yamamoto

Arata Yoneshige

A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1):R—N═RR  (1)wherein N is a nitrogen atom; Ris a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; Rand Rare each a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; provided that the hydrocarbon group, when it has a carbon number of 3 or more, may have a branched chain structure or a ring structure.

Dry etching method, method for producing semiconductor device, and dry etching gas composition

Growing community of inventors

Ube, Japan

Ryosuke Sawamura