Sony Corporation

Sony Semiconductor Solutions Corporation

Nipro Corporation

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Sony Group Corporation

Ryosuke Nakamura

Fumihiko Koga

Taiichiro Watanabe

Yoshihiro Yoshikawa

Masakatsu Takeuchi

Naoki Nakagawa

Hideaki Yamamoto

Masafumi Yao

Yusuke Wagatsuma

Shinya Asaka

Tetsuji Yamaguchi

Keisuke Hatano

Yuji Uesugi

Yusuke Sato

Tomohiko Asatsuma

Satoko Iida

Koshi Okita

Atsushi Suzuki

Takahiro Kawamura

Yorito Sakano

Kenji Matsuda

Shinji Matsuda

Kazunari Abe

Masayuki Toyoshima

There is provided a solid-state image pickup device including: a semiconductor substrate; a photodiode formed in the semiconductor substrate; a transistor having a gate electrode part or all of which is embedded in the semiconductor substrate, the transistor being configured to read a signal electric charge from the photodiode via the gate electrode; and an electric charge transfer layer provided between the gate electrode and the photodiode.

Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus

A solid-state imaging device includes a transfer transistor and an element separation section. The transfer transistor includes a vertical gate electrode. At least a portion of the element separation section is disposed apart from the vertical gate electrode with a semiconductor layer interposed in between. The semiconductor layer has a high concentration of impurities of a first electrical conduction type. The element separation section includes an oxide film insulator.

Solid-state imaging device and electronic apparatus

An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.

Imaging element and electronic device with light shielding portion between pixels

Pipette

Imaging element, imaging element driving method, and electronic device

Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Culture container

Solid-state imaging device and electronic apparatus with enhanced conversion efficiency

An imaging apparatus of the present disclosure includes: a first switch that couples a first light-receiving device and a first charge accumulation section to each other; a second switch that couples a predetermined node and the first charge accumulation section to each other; a third switch that applies a predetermined voltage to the predetermined node; a fourth switch that couples a second light-receiving device and a second charge accumulation section to each other; a fifth switch that couples the second charge accumulation section and the predetermined node to each other; an output section that outputs a pixel voltage; a driving section; and a processor that determines first to fourth values. The driving section turns on the second and third switches and turning off the first, fourth, and fifth switches to the off state in a first period, turns off the third switch and turns on the fifth switch in a second period, turns on the fourth switch in a third period, and turns off the fourth switch in a fourth period. The processor determines the third value on the basis of the pixel voltages in the second and fourth periods.

Imaging apparatus and imaging method

The present disclosure relates to an imaging device, a manufacturing method, a semiconductor device, and an electronic device that can further improve image quality. An imaging device includes a photoelectric conversion unit that receives and photoelectrically converts light, a floating diffusion layer that accumulates charge generated by the photoelectric conversion unit, and a diffusion layer that serves as a source or a drain of a transistor. Then, the floating diffusion layer is formed to have an impurity concentration lower than an impurity concentration of the diffusion layer. In addition, both a first photoelectric conversion unit that is able to accumulate the charge generated by the photoelectric conversion and a second photoelectric conversion unit from which the charge generated by the photoelectric conversion is sequentially taken out and accumulated in the floating diffusion layer are provided as the photoelectric conversion unit in one pixel, and the first photoelectric conversion unit and the second photoelectric conversion unit are arranged in a line in a longitudinal direction along a direction of illumination of light. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Imaging device, manufacturing method, semiconductor device, and electronic device

The present technology relates to a solid-state imaging device and an electronic apparatus that perform a stable overflow from a photodiode and prevent Qs from decreasing and color mixing from occurring. A solid-state imaging device according to an aspect of the present technology includes, at a light receiving surface side of a semiconductor substrate, a charge retention part that generates and retains a charge in response to incident light, an OFD into which the charge saturated at the charge retention part is discharged, and a potential barrier that becomes a barrier of the charge that flows from the charge retention part to the OFD, the OFD including a low concentration OFD and a high concentration OFD having different impurity concentrations of the same type, and the high concentration OFD and the potential barrier being formed at a distance. For example, the present technology is applicable to a CMOS image sensor.

Growing community of inventors

Kanagawa, Japan

Ryosuke Nakamura