Panasonic Electric Works Co., Ltd.

Matsushita Electric Works, Ltd.

Ryosuke Meshii

Kouji Sakai

Atsushi Ishigami

Eiichi Furukubo

Yoshihisa Fukuda

Takashi Yajima

In a semiconductor physical quantity sensor of electrostatic capacitance type, mutually facing peripheral areas (bonding areas) of a glass substrate and a silicon substrate are contacted for anodic bonding, while at the same time, both substrates have an anodic bonding voltage applied therebetween so as to be integrated. A fixed electrode is formed on a bonding face-side surface of the silicon substrate, while a movable electrode is formed on a bonding face-side surface of the semiconductor substrate. An equipotential wiring, which short-circuits the fixed electrode to the movable electrode as a countermeasure to discharge in anodic bonding, is formed on the bonding face-side surface of the glass substrate inside the bonding area before the anodic bonding. After the anodic bonding, the equipotential wiring is cut and removed. By manufacturing the sensor in this manner, the fixed electrode of the insulating substrate is made equipotential to the movable electrode of the semiconductor substrate when the insulating substrate is anodically bonded to the semiconductor substrate, thereby preventing discharge from occurring. Accordingly, it is possible to obtain a high bonding strength and desired sensor characteristics without causing bonding voids to occur and a sensor chip to increase in size.

Semiconductor physical quantity sensor of electrostatic capacitance type and method for manufacturing the same

A semiconductor acceleration sensor having beam parts formed in substantially L-shape to surround a weight part, wherein formed to surround a square part, as seen in plan view and constituting the weight part, are two elongated L-shaped beam parts, at locations close to proximal end portions of which are formed protruding portions protruding from a fixed part toward the weight part, and receiving recessed portions protruding from the weight part toward the fixed part to surround the protruding portions. The protruding portions have an outer shape substantially the same as an inner wall surface of the receiving recessed portions so that movements of the weight part in any directions in a horizontal direction perpendicular to an up and down direction are limited as a result of reception of the protruding portions by the receiving recessed portions. Thus, even when a side impact is applied to the acceleration sensor, the weight part is prevented from moving significantly, thereby preventing an excessive stress from being applied to the beam parts to break the beam parts.

Semiconductor acceleration sensor

A sensor unit includes a pressure sensor, an acceleration sensor and a signal-processing circuit, which are disposed on the bottom surface of a lead to form a line in the longitudinal direction of the sensor unit. The pressure sensor and the acceleration sensor are disposed at respective symmetrical positions with respect to the center of the signal-processing circuit in the longitudinal direction of the sensor unit. Each of the pressure sensor and the acceleration sensor has substantially the same height dimension. The sensors, the signal-processing circuit and the lead are sealed with a molded body, in such a manner as to allow lead terminals of the lead to protrude outside the molded body. The signal-processing circuit is operable, based on a signal from the acceleration sensor, to control the ON/OFF action of the pressure sensor.

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Mishima-gun, Japan

Ryosuke Meshii