Sony Semiconductor Solutions Corporation

Sony Corporation

Mitsubishi Electric Corporation

Sony Group Corporation

Ryosuke Matsumoto

Shuji Manda

Yorito Sakano

Shunsuke Maruyama

Naoyuki Sato

Atsushi Okuyama

Yuki Miyanami

Yoshiya Hagimoto

Hiroshi Tayanaka

Kentaro Akiyama

Yoichi Ueda

Takashi Oinoue

Yusuke Matsumura

Yusuke Oike

Suguru Saito

Hongbo Zhu

Yasufumi Miyoshi

Jun Ogi

Yoshiaki Tashiro

Keiichi Nakazawa

Takahiro Toyoshima

Yukari Takeya

Atsushi Horiuchi

Tetsuji Yamaguchi

Keisuke Matsuda

Tomomasa Watanabe

Shinichi Yoshida

Shigehiro Ikehara

Tomoyuki Hirano

Nobutoshi Fujii

Hideo Shimizu

Masahiro Joei

Naoki Suzuki

Junpei Yamamoto

Yoshifumi Zaizen

Masashi Binkai

Koji Furumi

Yuya Kumagai

There is provided a light-detecting device. A light-detecting device includes a first substrate including a first electrode, a semiconductor layer, a first insulating film, and a via, and a second substrate that faces the first substrate and is electrically connected to the semiconductor layer through the via. The semiconductor layer includes a compound semiconductor material. The first electrode includes a first portion and the second portion. The first portion of the first electrode is in contact with the semiconductor layer, and the second portion is in contact with both the first insulating film and the via.

Semiconductor element and electronic apparatus

The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

Solid-state image sensing device and electronic device

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Light receiving element and electronic apparatus

To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Imaging device and signal processing device

There is provided an imaging device including a first semiconductor layer formed on a semiconductor substrate, a second semiconductor layer formed on the first semiconductor layer and having an opposite conductivity type to the first semiconductor layer, a pixel separation portion that demarcates a pixel region including the first semiconductor layer and the second semiconductor layer, a first electrode connected to the first semiconductor layer from one surface side of the semiconductor substrate, and a metal layer connected to the second semiconductor layer from a light irradiation surface side which is the other surface of the semiconductor substrate and buried in the pixel separation portion in at least a part of the semiconductor substrate in a thickness direction.

Imaging device with improved short-wavelength sensitivity

A semiconductor element including: an element substrate provided with an element region at a middle part and a peripheral region outside the element region; and a readout circuit substrate facing the element substrate, in which the element substrate includes a first semiconductor layer provided in the element region and including a compound semiconductor material, a wiring layer provided between the first semiconductor layer and the readout circuit substrate, the wiring layer electrically coupling the first semiconductor layer and the readout circuit substrate to each other, a first passivation film provided between the wiring layer and the first semiconductor layer, and a second passivation film opposed to the first passivation film with the first semiconductor layer interposed therebetween, and in which the peripheral region of the element substrate includes a bonded surface with respect to the readout circuit substrate.

Semiconductor element and method of manufacturing the same

An imaging element including: a photoelectric conversion layer including a compound semiconductor material; a contact layer disposed to be stacked on the photoelectric conversion layer and including a diffusion region of first electrically-conductive type impurities in a selective region; a first insulating layer provided to be opposed to the photoelectric conversion layer with the contact layer interposed therebetween and having a first opening at a position facing the diffusion region; and a second insulating layer provided to be opposed to the contact layer with the first insulating layer interposed therebetween and having a second opening that communicates with the first opening and is smaller than the first opening.

Imaging element, semiconductor element, and electronic apparatus

The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.

Semiconductor device, method of manufacturing the same, and electronic apparatus

Each of a first filter to a fourth filter is an FIR filter having one tap. Each of a fifth filter and a sixth filter is an FIR filter having less than 46 taps. As a result, it is possible to obtain an adaptive equalization filter having a smaller total number of taps than an adaptive equalization filter using an FIR filter having 24 taps as each of the first to fourth filters.

Adaptive equalization filter and signal processing device

A transmitter generates a burst signal obtained by multiplexing signals of a first polarization and a second polarization orthogonal to each other, and including, at the beginning thereof, a pilot sequence in which the first and the second polarizations each have single frequency components of a first frequency and a second frequency different from each other. A coherent light reception unit performs conversion into an electrical signal by allowing received light and local light to interfere with each other. A pilot sequence detection unit detects a pilot sequence from the converted electrical signal. The polarization estimation unit estimates polarization states of the first polarization and the second polarization at a receiver from frequency components corresponding to the first frequency, and the second frequency. An equalizer demultiplexes the first polarization and the second polarization on the basis of the estimated polarization states.

Optical communication device

This light-receiving element includes: a substrate; a photoelectric conversion layer that is provided on the substrate and includes a first compound semiconductor, and absorbs a wavelength in an infrared region to generate electric charges; a semiconductor layer that is provided on the photoelectric conversion layer and includes a second compound semiconductor, and has an opening in a selective region; and an electrode that buries the opening of the semiconductor layer and is electrically coupled to the photoelectric conversion layer.

Light-receiving element, method of manufacturing light-receiving element, imaging device, and electronic apparatus

Growing community of inventors

Tokyo, Japan

Ryosuke Matsumoto