Sumitomo Electric Industries, Limited

Renesas Electronics Corporation

Ryosuke Kubota

So Tanaka

Taku Horii

Takeyoshi Masuda

Shunsuke Yamada

Shinji Kimura

Kyoko Okita

Masayuki Kobayashi

Daisuke Hamajima

Keiji Wada

Hiromu Shiomi

Taro Nishiguchi

Takayuki Nishiura

Ren Kimura

Kenji Kanbara

Akira Matsushima

Kazuhito Kobashi

An array device manufacturing method includes the steps of forming a plurality of optical elements on a wafer; inspecting the plurality of optical elements; defining dicing lines on the basis of a result of the inspection such that an array device composed entirely of one or more non-defective ones of the plurality of optical elements is obtained, the one or more non-defective ones being determined to be non-defective in the inspection; and forming the array device by dicing the wafer along the dicing lines.

Array device manufacturing method, manufacturing apparatus, and storage medium

In a method of manufacturing surface-emitting lasers, a substrate having a major surface including a plurality of areas each provided with a plurality of surface-emitting lasers is prepared. A first laser beam emitted when a direct-current voltage is applied to each of an n number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, n being an integer of 2 or greater. A second laser beam emitted when an alternating-current voltage is applied to each of an m number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, m being a natural number smaller than n. Whether the n number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the first laser beam. Whether the m number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the second laser beam.

Method of manufacturing surface-emitting lasers, method of testing surface-emitting lasers, and surface-emitting-laser-testing apparatus

A light-emitting module includes a substrate, a first surface-emitting laser mounted on the substrate, the first surface-emitting laser having a first engaging portion protruded outward at an end, and a second surface-emitting laser mounted on the substrate, the second surface-emitting laser having a second engaging portion recessed inward at an end. The first surface-emitting laser and the second surface-emitting laser are adjacent to each other. The first engaging portion and the second engaging portion are engaged with each other.

Light-emitting module and manufacturing method thereof, and surface-emitting laser

A method of fabricating a surface-emitting laser includes the steps of fabricating a substrate product including device sections, a pad electrode, and a conductor, each of the device sections including a surface-emitting laser having an electrode, the conductor connecting the pad electrode to the electrode across a boundary of the device sections; attaching a connection device to the substrate product, the connection device including a probe device having a probe and a probe support base having an opening; performing a burn-in test of the surface-emitting lasers by applying electric power to the pad electrode through the probe at a high temperature; and after the burn-in test, separating the substrate product into semiconductor chips. The burn-in test includes a step of monitoring light emitted by the surface-emitting laser through the opening during the burn-in test, and a step of selecting the surface-emitting lasers based on a monitoring result.

Method of fabricating surface-emitting laser

A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. The gate electrode is provided on the gate insulating film such that the gate insulating film lies between the gate electrode and the silicon carbide substrate. In a first stress test in which a gate voltage of &#x2212;5 V is applied to the gate electrode for 100 hours at a temperature of 175&#xb0; C., an absolute value of a difference between a first threshold voltage and a second threshold voltage is not more than 0.5 V, with a threshold voltage before the first stress test being defined as the first threshold voltage and a threshold voltage after the first stress test being defined as the second threshold voltage.

Silicon carbide semiconductor device and method for manufacturing the same

A silicon carbide semiconductor substrate includes: a base substrate that has a main surface having an outer diameter of not less than 100 mm and that is made of single-crystal silicon carbide; and an epitaxial layer formed on the main surface. The silicon carbide semiconductor substrate has an amount of warpage of not less than &#x2212;100 &#x3bc;m and not more than 100 &#x3bc;m when a substrate temperature is a room temperature and has an amount of warpage of not less than &#x2212;1.5 mm and not more than 1.5 mm when the substrate temperature is 400&#xb0; C.

Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface has a maximum diameter of more than 100 mm, and the silicon carbide semiconductor substrate has a thickness of not more than 700 &#x3bc;m. A dislocation density is not more than 500/mmat an arbitrary region having an area of 1 mmin a region within 5 mm from an outer circumferential end portion of the first main surface toward a center of the first main surface. Accordingly, there is provided a silicon carbide semiconductor substrate allowing for suppression of generation of cracks.

Silicon carbide semiconductor substrate and method for manufacturing same

A method for manufacturing a semiconductor device in accordance with the present invention includes the steps of preparing a semiconductor substrate, placing the semiconductor substrate on an electrostatic chuck, chucking the semiconductor substrate after raising a temperature of the electrostatic chuck to a first temperature, raising a temperature of the electrostatic chuck to a second temperature which is higher than the above-described first temperature in a state where the semiconductor substrate is chucked, and performing a treatment to the semiconductor substrate in a state where a temperature of the electrostatic chuck is maintained at the above-described second temperature.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes a step of preparing a SiC substrate, a step of fixing the SiC substrate on an electrostatic chuck and heat-treating the SiC substrate, and a step of performing ion implantation treatment on the SiC substrate fixed on the electrostatic chuck and heat-treated. The step of heat-treating includes an outer circumferential-side chucking step which generates an electrostatic attraction force between an outer circumferential region of the SiC substrate and an outer circumferential portion of the electrostatic chuck, the outer circumferential portion facing the outer circumferential region, and an inner circumferential-side chucking step which is started after the outer circumferential-side chucking step is started, and generates an electrostatic attraction force between an inner circumferential region of the SiC substrate and an inner circumferential portion of the electrostatic chuck, the inner circumferential portion facing the inner circumferential region.

Method for manufacturing semiconductor device including a heat treatment step

The steps of preparing a silicon carbide layer having a main surface, forming on the main surface, a first mask layer located on a first region to be a channel region and having a first opening portion on each of opposing regions with the first region lying therebetween, and forming a high-concentration impurity region having a first conductivity type and being higher in impurity concentration than the silicon carbide layer in a region exposed through the first opening portion, by implanting ions into the main surface with the first mask layer being interposed are included.

Method for manufacturing silicon carbide semiconductor device

A silicon carbide semiconductor device includes a silicon carbide layer and a gate insulating layer. The silicon carbide layer has a main surface. The gate insulating layer is arranged as being in contact with the main surface of the silicon carbide layer. The silicon carbide layer includes a drift region having a first conductivity type, a body region having a second conductivity type different from the first conductivity type and being in contact with the drift region, a source region having the first conductivity type and arranged as being spaced apart from the drift region by the body region, and a protruding region arranged to protrude from at least one side of the source region and the drift region into the body region, being in contact with the gate insulating layer, and having the first conductivity type.

A method for manufacturing a silicon carbide substrate includes the following steps. There is prepared a silicon carbide single crystal substrate having a first main surface, a second main surface, and a first side end portion, the second main surface being opposite to the first main surface, the first side end portion connecting the first main surface and the second main surface to each other, the first main surface having a width with a maximum value of more than 100 mm. A silicon carbide epitaxial layer is formed in contact with the first side end portion, the first main surface, and a boundary between the first main surface and the first side end portion. The silicon carbide epitaxial layer formed in contact with the first side end portion and the boundary is removed.

Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device

A first impurity region is formed by ion implantation of a first impurity into a first main surface of a silicon carbide substrate. A metal layer is formed in contact with the first impurity region. By annealing the silicon carbide substrate and the metal layer, an electrode is formed. The metal layer is formed such that a concentration of a first impurity at a boundary portion between the metal layer and the first impurity region becomes less than a maximum value of a concentration of the first impurity in the first impurity region. The electrode is formed such that a concentration of the first impurity at a boundary portion between the electrode and the first impurity region becomes not less than 80% of a maximum value of a concentration of the first impurity in the first impurity region in a normal direction.

Silicon carbide semiconductor device and method of manufacturing same

A silicon carbide substrate having a surface is prepared. An impurity region is formed by implanting ions from the surface into the silicon carbide substrate. Annealing for activating the impurity region is performed. The annealing includes the step of applying first laser light having a first wavelength to the surface of the silicon carbide substrate, and the step of applying second laser light having a second wavelength to the surface of the silicon carbide substrate. The silicon carbide substrate has first and second extinction coefficients at the first and second wavelengths, respectively. A ratio of the first extinction coefficient to the first wavelength is higher than 5&#xd7;10/m. A ratio of the second extinction coefficient to the second wavelength is lower than 5&#xd7;10/m. Consequently, damage to the surface of the silicon carbide substrate during laser annealing can be reduced.

Growing community of inventors

Osaka, Japan

Ryosuke Kubota