Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Ryosuke Kikuchi

Kazuhito Hato

Fumiyasu Oba

Takahiro Kurabuchi

Yu Kumagai

Takaiki Nomura

Toru Nakamura

Satoru Tamura

Tomoyasu Yokoyama

Yu Nishitani

Takahiro Suzuki

Taisuke Matsui

Koki Ueno

Hideaki Murase

Yasushi Kaneko

Yoshihiro Kozawa

Hisanori Mashiko

A dielectric of the present disclosure includes a composite oxide including at least two selected from the group consisting of Nb, Bi, and Ta, wherein the following requirement (I), (II), or (III) is satisfied: (I) the composite oxide includes Nb, Bi, and Ta; (II) the composite oxide includes Nb and Bi and is amorphous; and (III) the composite oxide includes Bi and Ta and is amorphous.

Dielectric, capacitor, electrical circuit, circuit board, and apparatus

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one electrode selected from the group consisting of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a divalent cation, and a halogen anion. The electron transport layer contains a metal oxynitride having electron conductivity. The metal oxynitride has an electrical conductivity of greater than or equal to 1×10S/cm.

Solar cell

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a semiconductor layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, and the semiconductor layer contains a compound containing Na, Zn, and O.

The present disclosure is to provide a multi-junction light energy conversion element including a material having a band gap suitable for a light energy conversion layer located upstream in an incidence direction of light. The present disclosure provides a light energy conversion element, comprising a first light energy conversion layer containing SrZnNand a second light energy conversion layer containing an light energy conversion material. The light energy conversion material has a narrower band gap than the SrZnN.

Multi-junction light energy conversion element, device comprising the same, and fabrication method of SnZn2N2

The present disclosure provides a light energy conversion element in which a material having a bandgap suitable for a light energy conversion layer is used. The light energy conversion element according to the present disclosure comprises a light energy conversion layer containing BaBiShaving a hexagonal crystal structure.

Light energy conversion element and device comprising the same

A semiconductor electrode according to the present disclosure includes a conductive substrate; a semiconductor layer which is provided on the conductive substrate, and absorbs visible light; and a protection layer with which the semiconductor layer is coated, in which the protection layer is formed of an oxynitride, the visible light travels through the protection layer, and the protection layer has a thinner thickness than the semiconductor layer.

Semiconductor electrode, device comprising the same, and a method for fabricating the same

The present invention provides a method for generating hydrogen by water splitting at a higher hydrogen generation efficiency. In the present method, used is a photoelectrochemical cell comprising a container, a liquid stored in the container, a semiconductor electrode contained in the container, and a counter electrode contained in the container. The semiconductor electrode comprises a first semiconductor layer, a light-transmissive conductor layer; and a second semiconductor layer.

Method for generating hydrogen by water splitting, and photoelectrochemical cell and semiconductor electrode used therefor

Provided is a semiconductor photoelectrode comprising a first conductive layer; a first n-type semiconductor layer disposed on the first conductive layer; and a second conductive layer covering the first n-type semiconductor layer. The first n-type semiconductor layer has a first n-type surface region and a second n-type surface region. The first n-type surface region is in contact with the first conductive layer. The second n-type surface region is in contact with the second conductive layer. The first n-type semiconductor layer is formed of at least one selected from the group consisting of a nitride semiconductor and an oxynitride semiconductor. The second conductive layer is light-transmissive. The second conductive layer is formed of a p-type oxide conductor.

Growing community of inventors

Osaka, Japan

Ryosuke Kikuchi