Kabushiki Kaisha Toshiba

Ryosuke Iljima

Tatsuo Shimizu

Takashi Shinohe

Chiharu Ota

Kazuto Takao

Shinya Kyogoku

According to one embodiment, a semiconductor device includes first to third electrodes, first to fourth semiconductor regions, and a first insulating film. The first electrode includes a first conductive region. The second electrode includes a second conductive region. The first semiconductor region includes first to fourth partial regions. The second semiconductor region includes a fifth partial region. The third semiconductor region includes a sixth partial region provided between the fourth partial region and the fifth partial region. The fourth semiconductor region includes is electrically connected to the second conductive region, and includes first and second portions. The first insulating film includes first to third insulating regions. The first insulating region is positioned between the first portion and the first conductive region. The second insulating region contacts the fourth and sixth partial regions. The third insulating region is positioned between the second portion and the first conductive region.

Semiconductor device and method for manufacturing the same

According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, a first insulating section, and a second insulating section. The first semiconductor region includes silicon carbide, is of a first conductivity type and includes first and second parts. The second semiconductor region includes silicon carbide, is of a second conductivity type and is provided on the second part. The third semiconductor region includes silicon carbide, is of the first conductivity type and is provided on the second semiconductor region. The first electrode is provided on the first part and the third semiconductor region. The first insulating section is provided on the third semiconductor region and juxtaposed with the first electrode. The second insulating section is provided between the first electrode and the first part and between the first electrode and the first insulating section.

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Setagaya, Japan

Ryosuke Iljima