Mitsubishi Electric Corporation

Nikon Corporation

Tohoku University

Ryoko Suzuki

Atsushi Muramatsu

Kiyoshi Kanie

Naoki Nakamura

Keisuke Matsumoto

Go Sakaino

Yosuke Suzuki

Yuichiro Okunuki

Yasutaka Nishi

Makoto Nakazumi

Provided here are: a mesa strip which has an n-type cladding layer, an active layer and a p-type cladding layer that are stacked sequentially on a surface of an n-type substrate; Fe-doped semi-insulating layers which are embedded along both sides of the mesa stripe, each up to a height higher than the mesa stripe; n-type blocking layers which are stacked on respective surfaces of the Fe-doped semi-insulating layers located on the both sides of the mesa stripe, and which are spaced apart from each other with an interval that is a space corresponding to a central portion of the active layer and is thus narrower than the active layer; p-type cladding layers which are formed on back surfaces of respective mesa-stripe-side end portions of the n-type blocking layers; and a p-type cladding layer which buries a top of the mesa stripe, the p-type cladding layers and the n-type blocking layers.

Method for manufacturing optical semiconductor device

Provided are ITO particles having a non-rectangular parallelepiped shape and an aligned crystal orientation inside particles.

ITO particles, dispersion, production method of ITO particles, production method of dispersion, and production method of ITO film

Provided is ITO particles satisfying a relationship expressed in Expression (1) given below. 16&#xd7;S/P&#x2264;0.330 . . . (1) (In the expression, S indicates a particle area in a TEM photographed image, and P indicates a perimeter of the particle).

ITO particles, dispersion, and production method of ITO film

An optical semiconductor device has a semiconductor laser which emits front-end-surface-side emergent light on the front end surface side and emits rear-end-surface-side emergent light on the rear end surface side, and a mount substrate having the semiconductor laser provided on its front surface. The rear-end-surface-side emergent light is emitted while having an emergence optical axis that extends away from the mount substrate with increase in distance from the rear end surface.

Optical semiconductor device

Growing community of inventors

Tokyo, Japan

Ryoko Suzuki