Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Ryoko Miyanaga

Makoto Kitabatake

Masao Uchida

Osamu Kusumoto

Kunimasa Takahashi

Yuzaburo Ban

Kenya Yamashita

Isao Kidoguchi

Yoshiaki Hasegawa

Masahiro Kume

Gaku Sugahara

Akihiko Ishibashi

Ayumu Tsujimura

Masakatsu Suzuki

Takumi Mikawa

Satoshi Kamiyama

Takeshi Takagi

Yoshio Kawashima

Kenji Harafuji

Shunsaku Muraoka

Satoru Fujii

Yoshihiko Kanzawa

Koji Katayama

Satoru Mitani

Kiyoshi Ohnaka

Nobuyuki Otsuka

Toshitaka Shimamoto

Toshiya Yokogawa

Kazuhiko Shimakawa

Kiyoyuki Morita

Tohru Saitoh

Koichi Osano

Shigeo Yoshii

Takashi Nishikawa

Yoichi Sasai

Yusaburo Ban

Fukukazu Hirayama

Koji Arita

Koichi Hashimoto

Takeki Ninomiya

Yukio Hayakawa

A current steering element () formed such that the current steering element covers a lower opening () of a via hole () formed in an interlayer insulating layer (), comprises: a corrosion-suppressing layer () formed on a lower side of a lower opening of the via hole such that the corrosion-suppressing layer covers an entire portion of the lower opening; a second electrode layer () formed under the corrosion-suppressing layer and comprising a material different from a material of the corrosion-suppressing layer; a current steering layer () formed under the second electrode layer such that the current steering layer is physically in contact with the second electrode layer; and a first electrode layer () formed under the current steering layer such that the first electrode layer is physically in contact with the current steering layer; and the first electrode layer, the current steering layer and the second electrode layer constitute one of a MSM diode and a MIM diode.

Current steering element and non-volatile memory element incorporating current steering element

A nonvolatile memory element comprises a first electrode layer (), a second electrode (), and a resistance variable layer () which is disposed between the first electrode layer () and the second electrode layer (), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (), (), wherein the resistance variable layer () has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0&#x3c;x&#x3c;2.5) and a second region comprising a second oxygen-deficient tantalum oxide having a composition represented by TaOy (x&#x3c;y&#x3c;2.5), the first region and the second region being arranged in a thickness direction of the resistance variable layer.

Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element

A nonvolatile semiconductor memory device of the present invention includes a substrate (), first wires (), memory cells each including a resistance variable element () and a portion of a diode element (), second wires () which respectively cross the first wires () to be perpendicular to the first wires () and each of which contains a remaining portion of the diode element (), and upper wires () formed via an interlayer insulating layer (), respectively, and the first wires () are connected to the upper wires () via first contacts (), respectively, and the second wires () are connected to the upper wires () via second contacts (), respectively.

Nonvolatile semiconductor memory device and manufacturing method thereof

A first wire layer () including first memory wires () is connected to a second wire layer () including second memory wires () via first contacts () penetrating a first interlayer insulating layer (). The first wire layer () is connected to and led out to upper wires () via second contacts () connected to the second wire layer () and penetrating the second interlayer insulating layer (). The first contacts () penetrate semiconductor layer () or insulator layer () of the second wire layer ().

Nonvolatile semiconductor memory device having a resistance variable layer and manufacturing method thereof

A resistance variable element of the present invention comprises a first electrode (), a second electrode (), and a resistance variable layer which is interposed between the first electrode () and the second electrode () to contact the first electrode () and the second electrode (), the resistance variable layer being configured to change in response to electric signals with different polarities which are applied between the first electrode () and the second electrode (), the resistance variable layer comprising an oxygen-deficient transition metal oxide layer, and the second electrode () comprising platinum having minute hillocks ().

Resistance variable element

A nonvolatile memory device includes via holes () formed at cross sections where first wires () cross second wires (), respectively, and current control elements () each including a current control layer (), a first electrode layer () and a second electrode layer () such that the current control layer () is sandwiched between the first electrode layer () and the second electrode layer (), in which resistance variable elements () are provided inside the via holes (), respectively, the first electrode layer () is disposed so as to cover the via hole (), the current control layer () is disposed so as to cover the first electrode layer (), the second electrode layer () is disposed on the current control layer (), a wire layer () of the second wire is disposed on the second electrode layer (), and the second wires () each includes the current control layer (), the second electrode layer () and the wire layer () of the second wire.

Nonvolatile memory apparatus and manufacturing method thereof

An upper part of a SIC substrateis oxidized at a temperature of 800 to 1400&#xb0; C., inclusive, in an oxygen atmosphere at 1.4&#xd7;10Pa or less, thereby forming a first insulating filmwhich is a thermal oxide film of 20 nm or less in thickness. Thereafter, annealing is performed, and then a first cap layer, which is a nitride film of about 5 nm in thickness, is formed thereon by CVD. A second insulating film, which is an oxide film of about 130 nm in thickness, is deposited thereon by CVD. A second cap layer, which is a nitride film of about 10 nm in thickness, is formed thereon. In this manner, a gate insulating filmmade of the first insulating filmthrough the second cap layeris formed, thus obtaining a low-loss highly-reliable semiconductor device.

Semiconductor device and production method therefor

A gate insulating film which is an oxide layer mainly made of SiOis formed over a silicon carbide substrate by thermal oxidation, and then, a resultant structure is annealed in an inert gas atmosphere in a chamber. Thereafter, the silicon carbide-oxide layered structure is placed in a chamber which has a vacuum pump and exposed to a reduced pressure NO gas atmosphere at a high temperature higher than 1100&#xb0; C. and lower than 1250&#xb0; C., whereby nitrogen is diffused in the gate insulating film. As a result, a gate insulating film which is a V-group element containing oxide layer, the lower part of which includes a high nitrogen concentration region, and the relative dielectric constant of which is 3.0 or higher, is obtained. The interface state density of an interface region between the V-group element containing oxide layer and the silicon carbide layer decreases.

Silicon carbide-oxide layered structure, production method thereof, and semiconductor device

An accumulation-mode MISFET comprises: a high-resistance SiC layerepitaxially grown on a SiC substrate; a well region; an accumulation channel layerhaving a multiple &#x3b4;-doped layer formed on the surface region of the well region; a contact region; a gate insulating film; and a gate electrode. The accumulation channel layerhas a structure in which undoped layersand &#x3b4;-doped layersallowing spreading movement of carriers to the undoped layersunder a quantum effect are alternately stacked. A source electrodeis provided which enters into the accumulation channel layerand the contact regionto come into direct contact with the contact region. It becomes unnecessary that a source region is formed by ion implantation, leading to reduction in fabrication cost.

Semiconductor device and method for manufacturing same

A method for fabricating a semiconductor device includes the steps of implanting ions into a silicon carbide thin film () formed on a silicon carbide substrate (), heating the silicon carbide substrate in a reduced pressure atmosphere to form a carbon layer () on the surface of the silicon carbide substrate, and performing activation annealing with respect to the silicon carbide substrate in an atmosphere under a pressure higher than in the step of forming the carbon layer () and at a temperature higher than in the step of forming the carbon layer ().

Silicon carbide semiconductor device and process for producing the same

A semiconductor device according to this invention includes: two level shift switches (A andB) each having first and second electrodes, a control electrode, a signal output electrode, and a first semiconductor region forming a transistor device section () which intervenes between the first electrode and the signal output electrode and is brought into or out of conduction according to a signal inputted to the control electrode and a resistor device section (Ra,Rb) which intervenes between the signal output electrode and the second electrode, the first semiconductor region comprising a wide bandgap semiconductor; and a diode () having a cathode-side electrode, an anode-side electrode, and a second semiconductor region comprising a wide bandgap semiconductor.

Device for implementing an inverter having a reduced size

A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.

Semiconductor laser device, optical disk apparatus and optical integrated unit

In a semiconductor device of the present invention, the top surface of an n-type silicon carbide layer formed on a silicon carbide substrate is miscut from the (0001) plane in the &#x3c;11-20&#x3e; direction. A gate electrode, a source electrode and other elements are arranged such that in a channel region, the dominating current flows along a miscut direction. In the present invention, a gate insulating film is formed and then heat treatment is performed in an atmosphere containing a group-V element. In this way, the interface state density at the interface between the silicon carbide layer and the gate insulating film is reduced. As a result, the electron mobility becomes higher in a miscut direction A than in the direction perpendicular to the miscut direction A.

High-breakdown-voltage insulated gate semiconductor device

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Nara, Japan

Ryoko Miyanaga