Sanken Electric Co., Ltd.

Ryoji Takahashi

Katsuyuki Torii

A field limiting regions are arranged in the upper surface of a semiconductor region in the peripheral region and connected to upper portions of at least some of columnar regions. An insulating film is provided on the semiconductor region in the peripheral region and covering a field limiting region. A coupling plate electrode is provided above a pair of the field limiting regions adjacent to each other in a direction from a boundary between the element region and the peripheral region to an outer edge of the peripheral region. The joint field regions are in contact with one of the pair of field limiting regions on a boundary side in an opening formed in the insulating film, and reaching the other one of the pair of the field limiting regions on an outer edge side with the insulating film interposed therebetween.

Semiconductor device

A semiconductor substrate of an IGFET has drain regions, a p-type first body region, a p-type second body region, an n-type first source region, and an n-type second source region, and additionally has multiple pairs of trenches that constitute an IGFET cell. A gate insulating film and a gate electrode are provided inside the trenches. A source electrode is in Schottky contact with the second body region. A pn junction between the second drain region and the first body region is exposed to one of the main surfaces of the semiconductor substrate. The first body region, the second body region, and the first source region are also provided outside the trenches, and an n-type protective semiconductor region is provided. The trenches contribute to miniaturization of the IGFET and to lowering of the on-resistance. The reverse breakdown voltage of the IGFET can be improved by the reduction in contact area between the second body region and the source electrode to the outside from the trenches.

Field-effect semiconductor device and method of producing the same

An integrated switching device has a switching IGFET connected between a pair of main terminals, a protector IGFET connected between the drain and gate electrodes of the switching IGFET, and a gate resistor connected between a main control terminal and the gate electrode of the switching IGFET. The protector IGFET has its gate electrode connected to the source electrode of the switching IGFET. The protector IGFET turns on in response to an application of a verse voltage to the switching IGFET thereby protecting the same from a reverse current flow.

Electronic switching device

An IGFET that can be turned off when a reverse voltage is applied. Included is a semiconductor substrate having formed therein an n-type drain region, p-type first body region, p-type second body region, n-type first source region, and n-type second source region. Trenches etched in the substrate receive gate electrodes via gate insulators. The source electrode is in ohmic contact with both first and second source regions and in schottky barrier contact with the second body region.

Insulated-gate field-effect transistor

An insulated gate bipolar transistor has a P-type collector region containing a P-type impurity such as boron. A relatively thin N-type buffer region containing arsenic in a relatively high concentration is formed on the collector region via an anti-diffusion region. The anti-diffusion region is provided in such a way that its thickness is the same as or slightly smaller than the distance over which the P-type impurity is diffused from the collector region toward the buffer region in a device fabrication process.

Insulated gate bipolar transistor having a high switching speed and method for fabricating the same

An IGBT has an N-type buffer region between a P-type collector region and a P-type base region. The buffer region includes arsenic as a N-type impurity. The buffer region is formed to have a relatively high impurity concentration of equal to or greater than 5&#xd7;1017 cm-3 and a relatively small thickness of 2 to 10 &#x3bc;m.

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Saitama, Japan

Ryoji Takahashi