Sony Corporation

Sony Semiconductor Solutions Corporation

Ebara Corporation

Sony Group Corporation

Isuzu Motors Limited

Nkk Corporation

Japan Atomic Energy Research Institute

Hino Motors, Ltd.

Atr Auditory and Visual Perception Research Laboratories

Ryoji Suzuki

Takahisa Ueno

Keiji Mabuchi

Kazuya Yonemoto

Koichi Shiono

Takashi Abe

Tomonori Mori

Yoshiharu Kudoh

Hiroyuki Mori

Eiji Makino

Tetsuya Uchida

Takahiro Abiru

Koji Mishina

Tomoyuki Hirano

Masahiro Itoh

Yorito Sakano

Tsutomu Haruta

Shinji Aoki

Nobuo Nakamura

Fumihiko Koga

Yasushi Maruyama

Takeshi Yanagita

Takashi Machida

Hiroaki Fujita

Kazunobu Ota

Atsushi Masagaki

Toshinobu Sugiyama

Shin Iwabuchi

Kazuhiro Hoshino

Hirotoshi Nomura

Masahiro Izutsu

Yoichi Ueda

Shinichi Yoshimura

Shinichi Yoshida

Yukari Takeya

Masashi Ohura

Hisahiro Ansai

Testuya Iizuka

Hirofumi Sumi

Maki Sato

Hiroshi Tayanaka

Harumi Tanaka

Takayuki Toyama

Hiroyuki Tsuchiya

Shoichi Sato

Okihiro Tokunaga

Takayuki Usui

Ikuo Yoshihara

Taichi Natori

Tetsuya Iizuka

Kyoichi Okamoto

Sueo Machi

Hitoshi Moriya

Shinichiro Izawa

Minoru Kowada

Motonari Honda

Takeshi Matsunuma

Atsuhiro Ando

Keita Kawamura

Kyohei Yoshimura

Yoshitaka Iizuka

Mitsuyoshi Kaneko

Tomomi Ito

Noritaka Fujita

Kazuaki Hayashi

Tsuneharu Miyachi

Mitsuo Kawato

Hideki Namba

Satsuki Kamogawa

Daisuke Saku

Akiko Yokoyama

Yoshiharu Maeda

Yoji Uno

Yasushi Aoki

Shouichi Suda

Yokichi Shibamura

Toru Agarida

Koji Takaya

Toshiaki Kuroki

Hiroshi Uchigata

Toshiyuki Yamada

Hisao Yoshimura

There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Solid-state imaging apparatus and electronic apparatus

The present technology relates to an imaging element that can increase the degree of freedom of element arrangement. A photoelectric conversion unit, a through trench penetrating a semiconductor substrate in a depth direction and formed between pixels each including the photoelectric conversion unit, and a PN junction region in a side wall of the trench are included, and the through trench has an opening portion, and a P-type region is formed in the opening portion. A photoelectric conversion unit, a holding unit, a through trench formed between the photoelectric conversion unit and the holding unit, and a PN junction region in a side wall of the through trench are included, and the through trench has an opening portion and a readout gate for reading the charge from the photoelectric conversion unit is formed in the opening portion. The present technology can be applied to, for example, an imaging element.

Imaging element having p-type and n-type solid phase diffusion layers formed in a side wall of an interpixel light shielding wall

The present technology relates to a solid-state imaging device capable of suppressing deterioration in dark characteristics, and an electronic apparatus. The present invention is provided with: a photoelectric conversion section that performs photoelectric conversion; a charge retaining section that temporarily retains electric charge converted by the photoelectric conversion section; and a first trench formed in a semiconductor substrate between the photoelectric conversion section and the charge retaining section, the first trench being higher than the photoelectric conversion section in a depth direction of the semiconductor substrate. Alternatively, the first trench is lower than the photoelectric conversion section and higher than the charge retaining section in the depth direction of the semiconductor substrate. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.

Solid-state imaging device and electronic apparatus

The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example.

Solid state image sensor having a grid-patterned inter-pixel isolation section separating the photoelectric conversion sections of each of the pixels from one another and provided with protruding sections

The present technique aims to provide a solid-state imaging device that reduces shading and color mixing between pixels. The present invention also provides a method of manufacturing the solid-state imaging device. The present technique further relates to a solid-state imaging device that enables provision of an electronic apparatus that uses the solid-state imaging device, a method of manufacturing the solid-state imaging device, and an electronic apparatus. The solid-state imaging device includes a substrate, pixels each including a photoelectric conversion unit formed in the substrate, and a color filter layer formed on the light incidence surface side of the substrate. The solid-state imaging device also includes a device isolating portion that is formed to divide the color filter layer and the substrate for the respective pixels, and has a lower refractive index than the refractive indexes of the color filter layer and the substrate.

Solid state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus

Provided is an imaging apparatus that includes a pixel array portion, a plurality of unit pixels being arranged in the pixel array portion and a driving unit controls an operation of the unit pixel, in which the unit pixel includes a photoelectric converter, a charge retention unit configured to retain a charge, a charge-voltage converter converts the charge into a voltage, a first transmitting unit transmits the charge from the photoelectric converter to the charge retention unit, a second transmitting unit transmits the charge from the photoelectric converter to the charge-voltage converter, and a third transmitting unit transmits the charge from the charge retention unit to the charge-voltage converter.

Imaging apparatus, driving method, and electronic device

Solid-state imaging element and electronic equipment

Color mixing between pixels is prevented in a solid-state imaging element in which a pair of pixels for detecting the phase difference of a pair of light rays are arranged. A pair of photoelectric conversion elements receive a pair of light rays made by pupil-splitting. A floating diffusion layer generates a pair of pixel signals from electric charge transferred from each of the pair of photoelectric conversion elements. A pair of transfer transistors transfer the electric charge from the pair of photoelectric conversion elements to the floating diffusion layer. In a case of detecting the phase difference of the pair of light rays from the pair of pixel signals, the control unit takes control so that back gate voltages that include the back gate potentials of both of the pair of transfer transistors with respect to the potential barrier between the pair of photoelectric conversion elements have values different from values in a case of synthesizing the pair of pixel signals.

Solid-state imaging element, imaging device, and method for controlling solid-state imaging element

Provided is an imaging apparatus that includes a pixel array portion, a plurality of unit pixels in the pixel array portion, and a driving unit that controls an operation of the unit pixel. The unit pixel includes a photoelectric converter, a charge retention unit that retains a charge, a charge-voltage converter that converts the charge into a voltage, a first transmitting unit that transmits the charge from the photoelectric converter to the charge retention unit, a second transmitting unit that transmits the charge from the photoelectric converter to the charge-voltage converter, and a third transmitting unit that transmits the charge from the charge retention unit to the charge-voltage converter.

Growing community of inventors

Kanagawa, Japan

Ryoji Suzuki