Hitachi, Ltd.

Hitachi Device Engineering Co., Ltd.

Ryoji Oritsuki

Yasushi Nakano

Nobuyuki Suzuki

Kazuhiko Horikoshi

Takuo Tamura

Miwako Nakahara

Hiromi Kanai

Hideaki Yamamoto

Akira Sasano

Mitsuo Nakatani

Haruo Matsumaru

Saburo Oikawa

Michio Tsukii

Tetsuaki Suzuki

Takeo Shiba

Kiyoshi Ogata

Makoto Ohkura

Toshihiko Itoga

Takahiro Kamo

Klyoshi Ogata

Susumu Saito

Tohru Watanabe

Masahiro Yanai

Kenichi Shimada

Masaru Takabatake

Kenkichi Suzuki

Minoru Hiroshima

Kazuo Shirahashi

Masaaki Matsuda

Kozo Odawara

Yuichi Hashimoto

Hayao Kozai

Yukio Ichimura

Toshikazu Horii

Takashi Isoda

A liquid crystal display device includes first and second substrates, a liquid crystal layer, a plurality of video signal lines and scanning signal lines formed on the first delimiting pixel regions, a plurality of video signal line driving circuits, and a thin film transistor formed in the pixel regions, and driven by a scanning signal from a scanning signal line. A display area contains a plurality of the pixel regions and a first and second protection element lines are formed at a peripheral portion of the display area and connected to the video signal lines by first and second high-resistance elements. A first circuit board is electrically connected with a portion of the video signal line driving circuits and a second circuit board is electrically connected with another portion of the video signal line driving circuits.

Liquid crystal display device

A liquid crystal display device having a first substrate, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, a plurality of video signal lines and scanning signal lines formed on the first substrate, and defining pixel regions, a thin film transistor formed in the pixel regions, and driven by a scanning signal from the scanning signal line for supplying video signal from one of the video signal lines to a pixel electrode and a display area containing a plurality of the pixel regions. A first protection element line formed at a peripheral portion of the display area, and being connected to a odd-numbered ones of the video signal lines by first high-resistance elements, and a second protection element line formed at a peripheral portion of the display area, and being connected to even-numbered ones of the video signal lines by second high-resistance elements.

Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500&#xb0; C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.

Process for manufacturing thin film transistor on unannealed glass substrate

To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H O or N O gas is fed at a processing temperature of 500&deg; C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH /hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

Thin-film transistor and method of manufacturing the same

To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H O or N O gas is fed at a processing temperature of 500&deg; C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH /hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.

Process of manufacturing a thin-film transistor

Pixel areas surrounded by scanning signal lines, video signal lines, and counter signal lines are formed on a liquid-crystal-side surface of a transparent substrate, and include thin-film transistors driven by scanning signals from the scanning signal lines, pixel electrodes to which video signals from the video signal lines are supplied via the thin-film transistors, and counter electrodes spaced apart from the pixel electrodes and connected to the counter signal lines. To prevent leakage current from flowing from the scanning signal lines or the video signal lines to the counter signal lines, a common line is formed around a display area constituted by the pixel areas, the video signal lines and the scanning signal lines are connected to the common line by non-linear elements, and the counter signal lines are connected to the common line by high-resistance elements.

Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500&deg; C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.

Thin film transistor and method for manufacturing the same

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al&mdash;Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to at least 1,000 angstroms. The fabrication yield and reliability can be improved.

Active matrix display device using aluminum alloy in scanning signal line or video signal line

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al--Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

Active matrix display device using aluminum alloy in scanning signal

An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. An alloy of Al containing Ta and Ti is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.

In a liquid crystal display substrate in which the pixel electrode is applied with a voltage through the drain and source of a thin-film transistor (TFT) that conducts by a voltage applied to the TFT gate electrode, this gate electrode and a busline connected to the gate electrode are formed as a multi-layered structure consisting of a gate layer and at least two layers of a gate insulation film and an amorphous silicon film. The multi-layered structure is formed by etching through a single mask.

Liquid crystal display device having multilayer gate busline composed of

A photosensor array device comprises a line sensor including a plurality of sets of sensors juxtaposed on a transparent glass substrate. Each set comprises an amorphous silicon photodiode, a crosstalk preventing element in the form of a diode or a transistor and a matrix wiring connected to the element. A selector is provided for driving the crosstalk preventing elements of the line sensor. The photodiode and the crosstalk preventing element are formed integrally.

Photosensor array devices

In a photosensor apparatus of the type including one dimensional photosensor array in which a plurality of photosensors mounted on a transparent substrate at a predetermined spacing are respectively connected in series with blocking diodes which select outputs of the photosensors. Each one of the photosensors comprises a plurality of laminated amorphous silicon diodes comprising p-i-n junction layers. Each blocking diode comprises at least one amorphous silicon diode having a p-i-n junction layer, and each photosensor generates an electromotive force larger than a forward voltage drop across each blocking diode.

Photosensor array wherein each photosensor comprises a plurality of

A photo-sensor array apparatus comprises an elongated photo-semiconductor substrate, a plurality of elongated upper electrodes arranged on the upper surface of the substrate in the direction of elongation which is identical with the longitudinal direction of the substrate, and a plurality of groups of transparent lower electrodes arranged on the lower surface of the substrate. The respective groups of lower electrodes are associated with the respective upper electrodes so as to be driven in a matrix fashion. Opposing ends of adjacent elongated upper electrodes are spaced a predetermined distance in the transverse direction of the substrate.

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Shirako-machi, Japan

Ryoji Oritsuki