Renesas Electronics Corporation

Konica Minolta, Inc.

Renesas Technology Corp.

Tokyo Denki University

Ryoji Matsuda

Shuichi Ueno

Takeharu Kuroiwa

Haruo Furuta

Takashi Takenaga

Yosuke Takeuchi

Tatsunori Murata

Mikio Tsujiuchi

Tatsuya Fukumura

Yiming Huai

Hiroshi Igarashi

Shin Hasegawa

Eugene Youjun Chen

Hiroshi Takada

Lien-Chang Wang

Motoi Ashida

Hiroyuki Chibahara

Yasuki Yoshihisa

Keisuke Tsukamoto

Yasumitsu Murai

Masamichi Matsuoka

Munenori Kawaji

Hiroshi Oshita

Shinya Hirano

Hidetaka Jidai

A spectral filter () is provided with a long-pass filter () and a short-pass filter (). The long-pass filter () has a film thickness gradient GL wherein film thickness increases monotonically in a single direction, and transmits light of a wavelength region longer than a cut-off wavelength WL. The short-pass filter () has a film thickness gradient GS wherein film thickness increases monotonically in a single direction, and transmits light of a wavelength region shorter than a cut-off wavelength WS. The long-pass filter () and the short-pass filter () are overlapped such that the single directions match each other. At the positions in the single directions, a transmittance peak is formed by the cut-off wavelength WL being shorter than the cut-off wavelength WS. The film thickness gradient GL is greater than the film thickness gradient GS.

Spectral filter and spectrometric device

A P-type epitaxial growth layer is formed on a P-type semiconductor substrate with an N-type buried region and a P-type buried region interposed therebetween. A cathode region, an anode region, and an N-type sinker region are formed in P-type epitaxial growth layer. A resistance element is formed on a surface of an isolation region that electrically isolates anode region and N-type sinker region. Resistance element has: one end portion electrically connected to each of anode region and N-type sinker region; and the other end portion electrically connected to a ground potential.

Semiconductor device

A semiconductor device in which noise is reduced without an increase in chip area. The device is used as an MRAM in which a memory mat is formed on a silicon substrate surface and the central area of the memory mat is used as a memory array and the area around the memory array is used as a dummy memory array. In the dummy memory array, a capacitor is formed between each bit line, each digit line and a supply voltage line, and a grounding voltage line. Therefore the peak value of a current flowing in each of the bit lines, digit lines and supply voltage line is decreased.

Semiconductor memory device with memory array and dummy memory array

Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

Method for manufacturing magnetic storage device and magnetic storage device

A magnetic storage device stable in write characteristic is provided. A first nonmagnetic film is provided over a recording layer. A first ferromagnetic film is provided over the first nonmagnetic film and has a first magnetization and a first film thickness. A second nonmagnetic film is provided over the first ferromagnetic film. A second ferromagnetic film is provided over the second nonmagnetic film, is coupled in antiparallel with the first ferromagnetic film, and has a second magnetization and a second film thickness. An antiferromagnetic film is provided over the second ferromagnetic film. The sum of the product of the first magnetization and the first film thickness and the product of the second magnetization and the second film thickness is smaller than the product of the magnetization of the recording layer and the film thickness of the recording layer.

Magnetic storage device

A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlO) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.

Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor

The present invention provides a tactile sensor which can reproduce a sensor surface in contact with a sensing object and contribute to a reduction in cost of an automation system which utilizes an industrial robot, the tactile sensor including: a contact-portion unitcomposed of a flexible material; a contact-portion housing unitwhich surrounds and houses the contact-portion unit in a removable state while forming a posture so that a top portion of the contact-portion unit may project; and a strain sensing elementor a pressure sensing element embedded into the contact-portion housing unit.

Tactile sensor

A semiconductor device includes a semiconductor substrate, a lower electrode, a magnetoresistive element, an upper electrode, and a protective film. The lower electrode is formed over the semiconductor substrate. The magnetoresistive element includes a fixed layer, a tunneling insulating film, and a free layer. The upper electrode is disposed over the free layer. The protective film covers the sides intersecting the main surfaces of the lower electrode, the fixed layer, the tunneling insulating film, the free layer, and the upper electrode. The fixed layer, whose magnetization direction is fixed, is disposed over the lower electrode. The tunneling insulating film is disposed over the fixed layer. The free layer, whose magnetization direction is variable, is disposed over a main surface of the tunneling insulating film. The width of the upper electrode is smaller than that of each of the lower electrode and the fixed layer.

Semiconductor device and manufacturing method of semiconductor device

To provide a manufacturing method of a semiconductor device capable of forming, as a protective film of an MTJ element, a silicon nitride film having good insulation properties without deteriorating the properties of the MTJ element. The method of the invention includes steps of forming a silicon nitride film over the entire surface including an MTJ element portion (MTJ element and an upper electrode) while using a parallel plate plasma CVD apparatus as a film forming apparatus and a film forming gas not containing NHbut composed of SiH/N/helium (He). The film forming temperature is set at from 200 to 350&#xb0; C. More ideally, a flow rate ratio of He to SiHis set at from 100 to 125.

Manufacturing method of semiconductor device having memory element with protective film

The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiOis formed.

Semiconductor device and method of manufacturing the same

A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.

Growing community of inventors

Tokyo, Japan

Ryoji Matsuda