Fuji Xerox Co., Ltd.

Toppan Printing Co., Ltd.

Ryoji Ishii

Hideo Nakayama

Yasuaki Kuwata

Akemi Murakami

Jun Sakurai

Hiromi Otoma

Naotaka Mukoyama

Hiroshi Suzuki

Kazuhiro Sakai

Junji Okada

Nobuaki Ueki

Takeshi Nishikawa

Tsuyoshi Inoue

Teiichi Suzuki

Tomoaki Kojima

Yasuaki Miyamoto

Takayuki Nakajima

Noboru Sasaki

Kayoko Nakamura

Takeshi Kanetaka

Miki Oohashi

Tadashi Hongo

A gas barrier film that includes at least a film base material including a polyester resin having a butylene terephthalate unit as a main constituent unit, and one or more metal oxide layers wherein the gas barrier film has a heat shrinkage rate in the machine direction (MD direction) after heating for 30 minutes at 150&#xb0; C. of 0.6% or more but less than 3.0%, the heat shrinkage rate being represented by the following formula: Heat shrinkage rate={(Length before heating&#x2212;Length after heating)/Length before heating}&#xd7;100(%).

Gas barrier film

An optical transmission apparatus includes an optical element that has at least one of a light emitting part and a light receiving part on a surface opposed to a mounting surface of the optical element, an optical waveguide that is made of a polymer material, and has an optical path deflecting part in a through hole or an opening, wherein the optical path deflecting part deflects an optical path of the optical with respect to the at least one of the light emitting part and the light receiving part of the optical element, and a substrate that has a mounting region on which the mounting surface of the optical element is mounted, and a plurality of waveguide holding parts, each holding the optical waveguide so that the optical path deflecting part of the optical waveguide is arranged opposite to the at least one of the light emitting part and the light receiving part of the optical element.

Optical transmission apparatus

A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector that is a first conductive type and formed on the substrate; an active region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector that is a second conductive type and formed on the active region; a current narrowing layer that is located between the first and second semiconductor multilayer reflectors, and in that a conductive region which has anisotropy in a long side direction and a short side direction within the surface which is parallel to a principal surface of the substrate is formed; and a convex lens member that is formed in a beam window which emits a light on the second multilayer reflector, and that has anisotropy in a long side direction and a short side direction within a surface which is parallel to the principal surface of the substrate.

Vertical cavity surface emitting laser, vertical cavity surface emitting laser device, optical transmission device, and information processing apparatus

A surface emitting semiconductor laser includes: a semiconductor substrate; a lower reflector that is formed on the semiconductor substrate and includes a semiconductor multilayer of a first conduction type; an upper reflector that is formed above the semiconductor substrate and includes a semiconductor multilayer of a second conduction type; an active region interposed between the lower reflector and the upper reflector; a current confining layer that is interposed between the lower reflector and the upper reflector and has a conductive region having an anisotropic shape in a plane perpendicular to an optical axis; and an electrode that is formed on the upper reflector and has an opening via which a laser beam is emitted, the opening having different edge shapes in directions of the anisotropic shape.

Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and optical information processing device

A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.

Semiconductor laser apparatus and manufacturing method thereof

A semiconductor device includes a substrate, a semiconductor layer formed on the substrate, and an optically functional portion formed by using at least a portion of the semiconductor layer. The optically functional portion performs light emission or light reception. The semiconductor device further includes a first driving electrode that is electrically connected to a semiconductor layer on a surface of the optically functional portion, and the first driving electrode drives the optically functional portion. The semiconductor device further includes an encapsulating electrode that is formed on the semiconductor layer to surround periphery of the optically functional portion, and electrically connected to the first driving electrode.

Semiconductor device and optical apparatus

There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.

Semiconductor laser apparatus and fabrication method of the same

A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.

Light-emitting module

A VCSEL including a substrate, a first semiconductor layer of a first conductivity-type formed on the substrate, an active layer formed on the first semiconductor layer, a second semiconductor layer of a second conductivity-type formed on the active layer, a first electrode wiring formed on a main surface of the substrate and electrically connected with the first semiconductor layer, a second electrode wiring formed on the main surface of the substrate and electrically connected with the second semiconductor layer, and a light emitting portion formed on the substrate for emitting laser light. A contact portion at which the first electrode wiring is electrically connected to the first semiconductor layer is formed in a range equal to or greater than &#x3c0;/2 radians and within &#x3c0; radians, centering on the light emitting portion.

VCSEL with improved high frequency characteristics, semiconductor laser device, module, and optical transmission device

A semiconductor laser apparatus includes a substrate, a vertical-cavity surface-emitting semiconductor laser diode (VCSEL) including a first and second mirror layers of a first and second conduction types, respectively, an active region between the first and second mirror layers, a first and second electrode layers electrically connected with the first and second mirror layers, respectively, and at least one Zener diode including a first and second semiconductor regions of a first and second conduction types, respectively, and a third and fourth electrode layers electrically connected with the first and second semiconductor regions, respectively. The second semiconductor region is formed in a portion of the first semiconductor region and forms a PN junction with the first semiconductor region. The VCSEL and the Zener diode are formed on the substrate. The first and second electrode layers are electrically connected with the fourth and third electrode layers, respectively.

A vapor-deposited film having a substrate consisting essentially of a polymer material and a vapor-deposited layer consisting essentially of a ceramic, the substrate being subjected to plasma pre-treatment using a hollow anode plasma treatment device, prior to vapor deposition of the vapor-deposited layer.

Vapor-deposited film

A vertical resonator type surface light emitting semiconductor laser device includes a semiconductor substrate having formed thereon a first semiconductor multi-layered film reflection mirror, an active layer, a second semiconductor multi-layered film reflection mirror, and a contact electrode having an opening for emitting laser light. The opening is covered with a protective film for preventing damage during fabrication after the contact electrode has been formed. Or, the protective film is provided on the second semiconductor multi-layered film reflection mirror so that the contact electrode is superimposed on the surface of the protective film, and the opening is formed on the protective layer. In this way, there is provided a vertical resonator type surface light emitting semiconductor laser device having high reliability, capable of stably producing laser light with a low resistance and a high output, which output does not decrease over time.

Growing community of inventors

Kanagawa, Japan

Ryoji Ishii