Sanyo Electric Co., Ltd.

Future Light, LLC

Sanyo Electronic Co., Ltd.

Ryoji Hiroyama

Masayuki Hata

Kiyoshi Oota

Yasuhiko Nomura

Daijiro Inoue

Yasuyuki Bessho

Yasuto Miyake

Masayuki Shono

Kunio Takeuchi

Tatsuya Kunisato

Shigeyuki Okamoto

Shingo Kameyama

Yasumitsu Kuno

Tsutomu Yamaguchi

Hiroki Ohbo

Hiroaki Izu

Shoji Honda

Koji Tominaga

Keiichi Yodoshi

Toyozo Nishida

Takahiro Uetani

Hiroyuki Kase

Kazushi Mori

Atsushi Tajiri

Akira Ibaraki

Teruaki Miyake

Takatoshi Ikegami

Noriaki Matsuoka

Yuzuru Miyata

Kouji Komeda

Junko Suzuki

Koji Komeda

A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device () includes a nitride-based semiconductor device layer () formed on a main surface of a (1-100) plane of a substrate (), having a light-emitting layer () having a main surface of a (1-100) plane, a facet () formed on an end of a region including the light-emitting layer () of the nitride-based semiconductor device layer (), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (), and a reflection surface () formed on a region opposed to the facet () of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (), extending in a direction inclined at an angle &#x3b8;(about) 62&#xb0; with respect to the facet ().

Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer

A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.

Method of manufacturing semiconductor device and semiconductor device

A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.

Semiconductor laser device and method of manufacturing the same

A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.

Nitride-based semiconductor device and method of manufacturing the same

One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

Nitride based semiconductor laser device with oxynitride protective films on facets

An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.

Integrated semiconductor laser device and method of fabricating the same

One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

Nitride based semiconductor laser device with oxynitride protective coatings on facets

A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

Nitride-based light-emitting device and method of manufacturing the same

A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.

Nitride-based semiconductor laser device and method of manufacturing the same

A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

Semiconductor laser diode

Growing community of inventors

Kyotanabe, Japan

Ryoji Hiroyama