Kabushiki Kaisha Toshiba

International Business Machines Corporation

Toshiba America Electronic Components, Inc.

Ryoji Hasumi

Takashi Yamaguchi

Tatsuya Ohguro

Takashi Yoshitomi

Masahiro Inohara

Hideki Kimijima

Edward J Nowak

Brent A Anderson

Josephine B Chang

Michael A Guillorn

Andres Bryant

Mickey H Yu

Masaaki Iwai

Masafumi Hamaguchi

A low power maskless inter-well deep trench isolation structure and methods of manufacture such structure are provided. A method includes depositing a plurality of layers over a substrate, and forming a layer over the plurality of layers. The method also includes forming well structures in the substrate, and forming sidewall spacers at opposing sides of the layer. The method further includes forming a self-aligned deep trench in the substrate to below the well structures, by removing the sidewall spacers and portions of the substrate aligned with an opening formed by the removal of the sidewall spacers. The method also includes forming a shallow trench in alignment with the deep trench. The method further includes forming shallow trench isolation structures and deep trench isolation structures by filling the shallow trench and the deep trench with insulator material.

Maskless inter-well deep trench isolation structure and methods of manufacture

A Direct Silicon Bonded substrate can include a first substrate and a second substrate in which the second substrate can be rotated to an azimuthal twist angle of 45 degrees in comparison to the first substrate. Disclosed are a semiconductor device and a method for making a semiconductor device that includes a DSB substrate with an adjusted thickness based upon the threshold voltage (Vt). In other words, a thicker substrate or layer can correspond to a high threshold voltage (HVt) and a thinner substrate or layer can correspond to a low threshold voltage (LVt) in order to improve mobility in LVt devices.

Semiconductor device on direct silicon bonded substrate with different layer thickness

A semiconductor integrated circuit design tool includes a reference data defining module configured to define design data of one of a plurality of transistors implementing the semiconductor integrated circuit as reference data, a simulator configured to simulate each effective channel length of the transistors, based on the design data and a reference channel length based on the reference data, and an adjuster configured to adjust gate lengths of gate electrodes of the transistors to reduce a difference between the effective channel length and the reference channel length.

Semiconductor integrated circuit design tool, computer implemented method for designing semiconductor integrated circuit, and method for manufacturing semiconductor integrated circuit

At present, Cu (copper) is being used as a wiring material. In an RF-CMOS device as a combination of an RF analog device and CMOS logic device, two electrodes of a MIM capacitor are formed from Cu having a large diffusion coefficient. To prevent Cu from diffusing to the capacitor insulating film of the MIM capacitor, diffusion prevention films having a function of preventing diffusion of Cu are interposed between the capacitor insulating film and the two electrodes. As a result, Cu forming the electrodes does not diffuse to the capacitor insulating film.

MIM capacitor having flat diffusion prevention films

Growing community of inventors

Yokohama, Japan

Ryoji Hasumi