Hitachi, Ltd.

Ryoji Fukuyama

Norio Nakazato

Makoto Nawata

Toshio Masuda

Kazue Takahashi

Takeshi Harada

Yutaka Kakehi

Fumio Shibata

Masaharu Nishiumi

Yutaka Omoto

Katsuaki Nagatomo

Hironobu Ueda

Tomoyuki Tamura

In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma generator installed in said vacuum chamber opposite to said sample, and a vacuum exhaust system to decrease pressure of said vacuum chamber, a bias voltage of Vdc&equals;&minus;300 to &minus;50 V is applied and the surface temperature of said plate ranges from 100 to 200&deg; C. In addition, the surface temperature fluctuation of the silicon-made plate in said plasma processing apparatus is kept within &plusmn;25&deg; C.

Plasma processing apparatus and plasma processing method

The present invention relates to a plasma processor, and the plasma processor comprises a processing chamber, means to reduce a pressure in the processing chamber so as to evacuate the interior thereof, means to introduce a processing gas into the processing chamber, means to generate an electric field within the processing chamber, and means to establish a magnetic field orthogonal to the electric field, this means being rotatable relative to a surface to-be-processed of a sample which is processed in a plasma arising under the action of the electric field and the magnetic field, whereby a space required for the movement of the means to establish the magnetic field orthogonal to the electric field can be reduced to miniaturize the processor, and the uniform processing of the sample can be attained using rotatable plasma.

Plasma processor

The present invention is concerned with a dry-etching method wherein a gaseous mixture of boron trichloride, chlorine and a hydrocarbon, to be used as an etching gas, is converted into plasma to etch aluminum or its alloys with ions or radicals formed thereby. The invention makes it possible to accomplish the anisotropic etching of aluminum or its alloys at high speeds with a low RF power density.

Dry etching method

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Kudamatsu, Japan

Ryoji Fukuyama