Nuflare Technology, Inc.

Canon Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Toshiba Machine Co., Ltd.

Ntt Advanced Technology Corporation

Ryoichi Yoshikawa

Munehiro Ogasawara

Hiroshi Matsumoto

Masanori Uchidoi

Hideo Inoue

Shosuke Haraguchi

Yoichi Tosaka

Yoshihiro Shigeta

Hiroshi Aizawa

Nobuo Tezuka

Yukio Iura

Tomohiro Iijima

Masanori Yamada

Masami Shimizu

Toru Tojo

Kyoji Yamashita

Hirotsugu Wada

Kazuhiro Chiba

Isao Watanabe

Hideo Tsuchiya

Katsuyuki Machida

Yasuo Kato

Hirofumi Morita

Jun Yashima

Shuichi Tamamushi

Yoji Sugiura

Toshio Yamaguchi

Mitsuo Tabata

Osamu Ikenaga

Masaaki Yoshida

Kazuto Matsuki

Hayato Kimura

Shunichi Sano

Hiroshi Yamashita

Mamoru Nakasuji

Tadahide Fukushima

Mineo Gotou

Kouichi Ohmori

Teruhisa Oda

Masakazu Tokita

Shunichi Nakahara

Naoki Nagase

Hirokazu Yamada

Teruaki Safu

Toshifumi Konishi

Takaaki Matsushima

Kazuhisa Kudo

Masaki Yano

Kunio Tanaka

Muehiro Ogasawara

Uchidoi Masanori

Kazuhiko Okajima

Sumio Nakayama

According to one aspect of the present invention, a charged particle beam writing apparatus includes correction figure data generation circuitry configured to generate pattern data of a correction figure pattern for correcting a figure portion detected, where the pattern data includes dose information to identify a dose of the correction figure pattern; correction figure pattern data conversion circuitry configured to convert the pattern data of the correction figure pattern into correction figure pattern pixel data defining a value corresponding to a dose for the each pixel, based on pixel setting common to that of the writing pattern pixel data; and combined-value pixel data generation circuitry configured to generate, for the each pixel, combined-value pixel data by adding the value defined in the writing pattern pixel data and the value defined in the correction figure pattern pixel data.

Charged particle beam writing apparatus and charged particle beam writing method

A multiple charged particle beam writing apparatus includes a defective pattern data generation circuitry configured to generate defective pattern data of a defective pattern having a shape of the defective region in the writing region; a reverse pattern data generation circuitry configured to generate reverse pattern data by reversing the defective pattern data; a combined-value pixel data generation circuitry configured to generate, for the each pixel, combined-value pixel data by adding a value defined in a reverse pattern pixel data and a value defined in a writing pattern pixel data; and a writing mechanism configured to perform multiple writing, using multiple charged particle beams, on the target object such that the each pixel is irradiated with a beam of a dose corresponding to a value defined in the combined-value pixel data.

Multiple charged particle beam writing apparatus, and multiple charged particle beam writing method

A multi charged particle beam writing method includes calculating first shot positions of multiple beams, each of which includes a distortion amount of an irradiating corresponding beam, in a case of irradiating each beam, based on control grid intervals, calculating first condition positions based on a pre-set condition, each of which is arranged in a corresponding first region surrounded by closest second shot positions of 2&#xd7;2 in length and width of the first shot positions, calculating, for each of second regions respectively surrounded by closest second condition positions of the first condition positions, an area density of a figure pattern in overlapping with a second region concerned, calculating an irradiation amount or an irradiation time of each beam whose corresponding first shot position is in a corresponding second region, based on an area density, and writing a pattern by irradiating a beam of the calculated irradiation amount or time.

Multi charged particle beam writing method and multi charged particle beam writing apparatus

A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

A multi charged particle beam writing apparatus includes a maximum irradiation time acquisition processing circuitry to acquire, for each shot of multi-beams, a maximum irradiation time of irradiation time of each of the multi-beams, a unit region writing time calculation processing circuitry to calculate, using the maximum irradiation time for each shot, a unit region writing time by totalizing the maximum irradiation time of each shot of a plurality of times of shots of the multi-beams which irradiate a unit region concerned during stage moving, for each unit region of a plurality of unit regions obtained by dividing a writing region of a target object, a stage speed calculation processing circuitry to calculate speed of the stage for each unit region so that the stage speed becomes variable, by using the unit region writing time and a stage control processing circuitry to variably control the stage speed.

Multi charged particle beam writing apparatus and multi charged particle beam writing method

A blanking device for multi-beams includes arrayed plural separate blanking systems, each performing blanking control switching a corresponding beam of multi charged particle beams between a beam ON state and a beam OFF state and each including a first electrode, a first potential applying mechanism applying two different potentials selectively to the first electrode for the blanking control, and a second electrode performing blanking deflection of the corresponding beam, the second electrode being grounded and paired with the first electrode, and a potential change mechanism changing a potential of the second electrode from a ground potential to another potential, wherein when a potential of the first electrode included in one of the separate blanking systems is fixed to the ground potential, the potential change mechanism changes the potential of the second electrode corresponding to the first electrode fixed to the ground potential, from the ground potential to the another potential.

Blanking device for multi-beam of charged particle writing apparatus using multi-beam of charged particle and defective beam blocking method for multi-beam of charged particle

A multi charged particle beam writing method includes, shifting a writing position of each corresponding beam to a next writing position by performing another beam deflection of multi charged particle beams, in addition to the beam deflection for a tracking control, while continuing the beam deflection for the tracking control after the maximum writing time has passed; emitting the each corresponding beam in the 'on' state to the next writing position having been shifted of the each corresponding beam, during a corresponding writing time while continuing the tracking control; and returning a tracking position such that a next tracking start position is a former tracking start position where the tracking control was started, by resetting the beam deflection for the tracking control after emitting the each corresponding beam to the next writing position having been shifted at least once of the each corresponding beam while continuing the tracking control.

Multi charged particle beam writing method, and multi charged particle beam writing apparatus

A method for fabricating a blanking aperture array device for multi-beams includes forming, using a substrate over which a first insulating film, a first metal film, a second insulating film, and a second metal film are laminated in order, electrodes and pads on the second metal film, removing a part of the second metal film, removing the second insulating film using, as a mask, the electrodes, the pads, and a remaining part of the second metal film, and forming openings each being between a pair of electrodes, wherein, a part of the second metal film is etched such that some part of it remains in regions each connecting one of the electrodes and one of the pads, and a region in which entire openings are formed except the openings themselves is configured by the electrodes, pads, and first and second metal films such that the insulating film is not exposed.

Blanking aperture array device for multi-beams, and fabrication method of blanking aperture array device for multi-beams

In accordance with one aspect of this invention, a multi charged particle beam writing apparatus includes an aperture member, in which a plurality of openings are formed, configured to form multi-beams by making portions of the charged particle beam pass through the plurality of openings; a plurality of blankers configured to perform blanking-deflect regarding beams corresponding to the multi-beams; a writing processing control unit configured to control writing processing with a plurality of beams having passed through different openings among the plurality of openings being irradiated on the target object at a predetermined control grid interval; and a dose controlling unit configured to variably control a dose of a beam associated with deviation according to a deviation amount when an interval between the plurality of beams irradiated is deviated from the control grid interval.

A multi charged particle beam writing apparatus includes a divided shot data generation unit to generate, for each shot of multi beams of charged particle beams, data for plural times of divided shots such that irradiation for one shot of each beam is divided into plural times of divided shots each having a different irradiation time, an individual blanking system to provide blanking control individually for each of multi beams, based on the data for plural times of divided shots, an elastic rate correction value acquisition unit to acquire, for each of plural times of divided shots, an elastic rate correction value for correcting an elastic rate of an image of the whole multi beams, depending upon the number of ON-beams of the multi beams, and a lens to correct, for each divided shot, the elastic rate of the image of the whole multi beams by using the correction value.

Multi charged particle beam writing apparatus, and multi charged particle beam writing method

A multi charged particle beam writing apparatus according to an embodiment, includes a setting unit to set a second region such that more openings in remaining openings except for an opening through which the defective beam passes are included in the second region, a selection unit to select a mode from a first mode in which a pattern is written on a target object by using multiple beams having passed openings in the second region and a second mode in which multiple writing is performed while shifting a position by using at least one of remaining multiple beams in the state where the defective beam is controlled to be beam off and additional writing is performed for a position which was supposed to be written by the defective beam, and a writing processing control unit to control to write in the mode selected.

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Kanagawa, Japan

Ryoichi Yoshikawa