Tokyo Electron Limited

Ryoichi Yoshida

Ken Kobayashi

Masanobu Honda

Yoshihide Kihara

Michishige Saito

Takayuki Ishii

Nobutaka Sasaki

Masanori Hosoya

Akira Obi

Masaya Kawamata

Tetsuo Yoshida

Hiraku Murakami

Toshikatsu Wakaki

Hiroshi Suzuki

Hiromi Mochizuki

Masahiro Ito

Hayato Aoyama

There is provided an etching method for etching an object to be processed by using a substrate processing apparatus including a process chamber including a first electrode and a second electrode disposed opposite to the first electrode to receive the object to be processed thereon. The etching method includes a process of removing at least one of a first polymer and a second polymer by etching the object to be processed on which a pattern of the first polymer and the second polymer is formed by phase separation of a block copolymer containing the first polymer and the second polymer at a temperature lower than or equal to 10 degrees C. by using plasma of a process gas.

Etching method

A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. A second space is defined between the upper electrode and the lower electrode. The grounding unit is configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction.

Plasma processing apparatus and method for processing object

A method of processing a target object includes (a) exposing a resist mask to active species of hydrogen generated by exciting plasma of a hydrogen-containing gas within a processing vessel while the target object is mounted on a mounting table provided in the processing vessel; and (b) etching a hard mask layer by exciting plasma of an etchant gas within the processing vessel after the exposing of the resist mask to the active species of hydrogen. The plasma is excited by applying of a high frequency power for plasma excitation to an upper electrode. In the method, a distance between the upper electrode and the mounting table in the etching of the hard mask layer ((b) process) is set to be larger than a distance between the upper electrode and the mounting table in the exposing of the resist mask to the active species of hydrogen ((a) process).

Method of processing target object and plasma processing apparatus

An etching method is provided for performing an etching process on an etching target film arranged on a substrate. The etching method includes the steps of supplying a treatment gas including a halogen-containing gas, hydrogen gas, an inert gas, and oxygen gas; performing a treatment on a patterned mask arranged on the etching target film using a plasma generated from the treatment gas; and etching the etching target film that has undergone the treatment using a plasma generated from an etching gas.

A plasma etching method includes a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern with plasma generated from a hydrogen-containing gas. Further, the plasma etching method includes an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based gas by using the plasma-processed photoresist as a mask. Furthermore, in the plasma etching method, the plasma process and the etching process are repeated at least two or more times.

Plasma etching method and plasma etching apparatus

A plasma processing method includes a surface improving step of improving a surface of the photoresist film by performing plasma processing using a hydrogen-containing gas as a processing gas and an etching step of etching the SiON film by performing plasma processing using a processing gas including a gas containing a CHF-based gas and a chlorine-containing gas while using as a mask the photoresist film having the improved surface.

Plasma processing method

A plasma etching method by using a plasma etching apparatus having a depressurizable processing chamber; a lower electrode for mounting thereon a substrate to be processed in the processing chamber; an upper electrode facing the lower electrode in the processing chamber with a plasma generation region formed therebetween; a radio frequency power supply unit for applying a radio frequency power between the upper electrode and the lower electrode to thereby form a radio frequency electric field in the plasma generation region, the method comprising: supplying a first gas including etchant gas to an upper gas inlet to introduce the first gas through the upper electrode into the plasma generation region; and feeding a second gas including dilution gas to a side gas inlet to introduce the second gas through a sidewall of the processing chamber into the plasma generation region.

Plasma etching method

A plasma processing method includes: etching an anti reflection coating film with plasma generated from an etching gas by using a resist film that is patterned as a mask, in a deposited film in which an Si-ARC film constituting the anti reflection coating film is formed on a layer to be etched and the ArF resist film is formed on the anti reflection coating film; and modifying the ArF resist film with plasma generated from a modifying gas including a CFgas, a COS gas and an Ar gas by introducing the modifying gas into a plasma processing apparatus, wherein the modifying is performed before the etching.

Plasma processing method and plasma processing apparatus

In a plasma etching method, a substrate including an underlying film, an insulating film and a resist mask is plasma etched to thereby form a number of holes in the insulating film including a dense region and a sparse region by using a parallel plate plasma etching apparatus for applying a plasma-generating high frequency electric power to a space between an upper and a lower electrode and a biasing high frequency electric power to the lower electrode. The plasma etching method includes mounting the substrate on a mounting table; supplying a first process gas containing carbon and fluorine to form the holes in the insulating film to a depth close to the underlying film; and supplying a second process gas including an inert gas and another gas contain carbon and fluorine to have the holes reach the underlying film while applying a negative DC voltage to the upper electrode.

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Miyagi, Japan

Ryoichi Yoshida