Fuji Electric Co., Ltd.

Kabushiki Kaisha Toshiba

Waseda University

The Furukawa Electric Co., Ltd.

Nippon Light Metal Company, Ltd.

Kojin Co., Ltd.

Ryoichi Kato

Yoshinari Ikeda

Yuma Murata

Hiromichi Gohara

Naoyuki Kanai

Akito Nakagome

Kohei Yamauchi

Eiji Mochizuki

Tatsuo Nishizawa

Takafumi Yamada

Tatsuhiko Asai

Kosuke Hatsuda

Hidenori Matsuzaki

Junji Yano

Motohito Hori

Yoshitaka Nishimura

Katsumi Taniguchi

Tomoyuki Miyashita

Shinji Tada

Takashi Saito

Eiji Anzai

Toshikatsu Hida

Hirokuni Yano

Isao Takahashi

Yoshikazu Takahashi

Akio Kitamura

Mitsunori Tadokoro

Tadahiko Sato

Takashi Hirao

Fumihiko Momose

Yuichiro Hinata

Souichi Yoshida

Wataru Okamoto

Kuniteru Mihara

Akira Hirao

Tomoyuki Hirayama

Takumi Nakamura

Yoshihiro Tateishi

Michihiro Inaba

Kento Shirata

Ryotaro Tsuruoka

Yutaka Hirano

Tetsuya Sunago

Hajime Masubuchi

Shingo Otake

Akihito Aoki

Hiroaki Hokazono

Shunsuke Numata

Shun Okada

Mai Saitou

A semiconductor module includes an insulating sheet which has a first surface and extends in a first direction and a first terminal. The first terminal has a first region disposed on the first surface of the insulating sheet and having a first width in a second direction perpendicular to the first direction, a second region extending from the first region and having a second width in the second direction narrower than the first width, and a third region located away from the first surface and being electrically connected to both the first region and the second region.

Semiconductor module, semiconductor device, and semiconductor device manufacturing method

A semiconductor module includes a first case having a first side face, a first insulating paper disposed on the first case and having a first width in a first direction and having a notch with a second width smaller than the first width, a first terminal between the first case and the first insulating paper, having an exposed portion exposed from the first insulating paper at an area where the notch is formed, and a second terminal on the first insulating paper at a side opposite to a side where the first terminal is disposed. The first terminal and the first insulating paper have extended portions extending to an outside of the first case from the first side face so that a portion of the first insulating paper where the notch is formed and the exposed portion of the first terminal are located at the outside of the first case.

Semiconductor device and semiconductor device manufacturing method

A semiconductor device includes a baseplate and a case which includes an external wall surrounding an internal space and a dividing wall extending in a first direction and separating the space into compartments. The dividing wall has a lower end fixed to the principal surface and includes, on a sidewall, a terrace positioned further away from the principal surface than the lower end and hanging out toward the space compared to the lower end in a second direction parallel to the principal surface and perpendicular to the first direction. A terminal's bonding part, to which a wire is bonded, is disposed on the terrace. A ratio of the wire's diameter to the bonding part's width in the first direction is set to ≤0.15, which prevents a situation where bonding power is not sufficiently applied to the bonding part during ultrasonic bonding of the wire, thus increasing the bonding strength.

Semiconductor device and manufacturing method therefor

A semiconductor device includes a terminal portion including a second external terminal, an insulating sheet disposed on the second external terminal, and a first external terminal disposed on the insulating sheet. The first external terminal has a first end portion with a first end. At the first end portion, a rear surface of the first external terminal is not parallel to a front surface of the second external terminal so that, in a thickness direction of the first external terminal, a distance between the first external terminal and the second external terminal increases with as the first end is approached.

Semiconductor device and manufacturing method thereof

A semiconductor module includes a laminated substrate having an insulating plate, a circuit pattern arranged on an upper surface of the insulating plate and a heat dissipating plate arranged on a lower surface of the insulating plate. The semiconductor module also includes a semiconductor device having a collector electrode arranged on its upper surface, having an emitter electrode and a gate electrode arranged on its lower surface, and bumps respectively bonding the emitter electrode and the gate electrode to an upper surface of the circuit pattern. Each of the bumps is made of a sintered metal such that the bump is formed to be constricted in its middle portion in a thickness direction orthogonal to a surface of the insulating plate.

Manufacturing method of packaging structure for bipolar transistor with constricted bumps

There is provided a semiconductor module capable of preventing the peeling of a sealing resin on the side where connection sections used for the connection to semiconductor elements are arranged. A semiconductor module includes: an outer frame; sealing resins; gate signal output terminals, and partition sections laid across the outer flame to partition a space into a plurality of housing sections, in the partition sections which the gate signal output terminals with connection sections exposed are arranged. The partition sections have first surface sections on the side where the connection sections are arranged and second surface sections formed, on the side where the connection sections are not arranged, such that the peeling strength to the sealing resins is lower than that of the first surface sections.

Semiconductor module

Provided is a semiconductor module that can improve the insulation properties at terminals to which electric power is supplied. A semiconductor module includes a negative electrode terminal connected to a negative electrode side of direct current power; a positive electrode terminal disposed above the negative electrode terminal and connected to a positive electrode side of the direct current power in a state where an exposed portion of the negative electrode terminal including one end of the negative electrode terminal is exposed; an insulating sheet disposed between the negative electrode terminal and the positive electrode terminal for insulation between the negative electrode terminal and the positive electrode terminal in a state where an exposed portion of the insulating sheet is exposed between the one end of the negative electrode terminal and one end of the positive electrode terminal; and a first dielectric portion formed to cover at least a corner of the one end of the positive electrode terminal, the corner being in contact with the insulating sheet.

There are provided a semiconductor module capable of preventing the peeling of a sealing resin on the side where a connection section used for the connection to a semiconductor element is arranged and a manufacturing method for a semiconductor module. A semiconductor module includes: an outer frame; sealing resins; gate signal output terminals, and partition sections laid across the outer flame to partition a space into a plurality of housing sections, in the partition sections which the gate signal output terminals with connection sections exposed are arranged. The partition sections have through holes where sealing resins are formed, the sealing resins connecting adjacent housing sections and the sealing resin formed in the through hole being continuous with the sealing resins formed in the housing sections.

Semiconductor module and method for manufacturing semiconductor module

A capacitor includes a case including a capacitor element, a first connection terminal, a second connection terminal, and a second insulating sheet formed between the first connection terminal and the second connection terminal, and the first connection terminal, the second insulating sheet, and the second connection terminal extend to the outside from the case. A semiconductor module includes a multi-layer terminal portion in which a first power terminal, a first insulating sheet, and a second power terminal are sequentially stacked. The first power terminal includes a first bonding area electrically connected to the first connection terminal, and the second power terminal includes a second bonding area electrically connected to the second connection terminal. The first insulating sheet includes a terrace portion that extends in a direction from the second bonding area towards the first bonding area in a planar view.

Semiconductor device comprising a capacitor

A semiconductor device includes: an insulated circuit substrate; a power semiconductor element mounted on the insulated circuit substrate; a first terminal having a plate-like shape having a first main surface and electrically connected to the power semiconductor element; a second terminal having a second main surface opposed to the first main surface of the first terminal and electrically connected to the power semiconductor element; an insulating sheet interposed between the first main surface and the second main surface; and a conductive film provided on at least one of the first main surface side and the second main surface side of the insulating sheet.

Semiconductor device having an insulating sheet and a conductive film, and method of manufacturing the same

A cooling device includes a body having a flow passage for a heating medium that passes through the body, a first header made of a resin that has an inlet and covers a first end, and a second header made of a resin that has an outlet and covers a second end. The body has a front face, a back face, a first side face, and a second side face. The body and the first header are bonded to a first bonding face, a second bonding face, a third bonding face, and a fourth bonding face. The third bonding face is a curved surface that protrudes toward a +Y side. The fourth bonding face is a curved surface that protrudes toward a −Y side.

Heat exchanger having cured edge

A method for manufacturing a semiconductor device includes obtaining a shear stress Fat which that a value obtained by dividing a loss elastic modulus by a storage elastic modulus equals 1 for each of a plurality of candidate heat conductive greases at each of a plurality of temperatures that are within a prescribed control temperature range determined based on an operation temperature range of the semiconductor device to be manufactured; selecting a heat conductive grease, among the plurality of candidate heat conductive greases, that has a value of Fof 100 Pa or more and 200 Pa or less at each of the plurality of the temperatures within the prescribed control temperature range; and attaching a resin sealed body that includes a semiconductor element mounted on a laminated substrate therein to a cooler via the heat conductive grease that has been selected in the selecting.

Manufacturing method of semiconductor device

A semiconductor module includes a resin case housing a semiconductor element; an insulating layer extending outward from the resin case; and a first external connection terminal extending outward from the resin case, arranged above the insulating layer so as to face the insulting layer, the first external connection terminal having a non-contact portion that is not in contact with the insulating layer in a thickness direction of the insulating layer at a position overlapping the insulating layer in a plan view.

Semiconductor module comprising a resin case and an external connection terminal

A semiconductor module has a heat conduction section provided between a multilayer substrate, on which semiconductor chips are mounted, and a cooler. The heat conduction section includes a frame and an opening, and the opening has a grease portion which is provided partly in the opening and is in contact with the multilayer substrate and the cooler, and a space portion which is provided between the grease portion and the frame in a partial and band-shaped manner.

Semiconductor module, power conversion device, and manufacturing method of semiconductor module

A semiconductor device includes: a first semiconductor chip having a metal layer on a top surface; a first wiring member arranged to face the metal layer; a sintered-metal layer arranged between the metal layer and the first wiring member, having a first region and a plurality of second regions provided inside the first region, the second regions having lower tensile strength than the first region; and a metallic member arranged inside the sintered-metal layer, wherein the second regions of the sintered-metal layer have lower tensile strength than the metal layer of the first semiconductor chip.

Semiconductor device and method for manufacturing semiconductor device

Growing community of inventors

Matsumoto, Japan

Ryoichi Kato