Hitachi, Ltd.

Renesas Electronics Corporation

Hitachi Tohbu Semiconductor, Ltd.

Renesas Technology Corp.

Other

Hitachi Automotive Systems, Ltd.

Hitachi Cable, Inc.

Renesas Eastern Japan Semiconductor, Inc.

Ryoichi Kajiwara

Kazuya Takahashi

Masahiro Koizumi

Toshiaki Morita

Toshinori Hirashima

Munehisa Kishimoto

Toshiyuki Hata

Hiroshi Sato

Shigeru Ishii

Keiichi Ookawa

Shigehisa Motowaki

Kazutoshi Itou

Toshiaki Ishii

Takuya Nakajo

Hiroshi Hozoji

Takao Funamoto

Tomohiko Shida

Hiroshi Wachi

Kazutoshi Ito

Asao Nishimura

Yasushi Takahashi

Katsuo Arai

Hidemasa Kagii

Yusuke Asaumi

Tokiyuki Seto

Mituo Kato

Mituo Katou

Takeshi Matsuzaka

Masayoshi Shinoda

Kunihiro Tsubosaki

Hiroshi Watanabe

Tomiya Abe

Takashi Ando

Kazuhiro Suzuki

Yukiharu Akiyama

Masaki Tamura

Masatoshi Watanabe

Katuo Sugawara

Masaru Kamoshida

Minoru Yamada

Hiroi Oka

Keiichirou Nakanishi

Yoshiyuki Ando

Yuichi Yato

Keiichi Okawa

Yuzo Kozono

Satoshi Kokura

Akira Onuma

Akihiko Narisawa

Setuo Sekine

Toshiak Morita

Minoru Maruta

Toshiyuki Takahashi

Sigehisa Motowaki

Mitsuo Katoo

Hiroshi Hozouji

There is provided an on-vehicle electronic module that includes an external connecting function and environment resistant reliability similar to a previous on-vehicle electronic module and that simultaneously achieves downsizing without a male connector housing component and cost reduction due to reduction of the number of components and assembly man-hours. There are included a circuit boardincluding a mounting regionand a terminal forming region, and a case housing the mounting regionof the circuit board. Electronic componentsandare mounted on the mounting region. A board terminal is formed in the terminal forming region. The case includes a case memberintegrally formed with a wall surface and a male connector housing. The wall surface forms a case internal spacethat houses the mounting region. A female connector is mounted to the male connector housing. The circuit boardpenetrates the case membersuch that the terminal forming regionis exposed to a housing spaceside of the male connector housing

Vehicle-mounted electronic module

Provided are a metal-resin composite having excellent adhesive strength, a method for producing the same, a busbar, a module case, and a resinous connector part. The metal-resin composite comprises a metallic memberincluding a metal with a high melting point of 500&#xb0; C. or more, a resin memberbeing integrated with the metallic member; and an alloy layerincluding a metal with a low melting point lower than 500&#xb0; C. The alloy layeris arranged between the metallic memberand the resin member, and has average surface roughness thereof in the range from 5 nm or more to less than 1 &#x3bc;m at the interface between the alloy layerand the resin member. Herein, a period of the unevenness formed on the interface of the alloy layeris in the range from 5 nm or more to less than 1 &#x3bc;m.

Metal-resin composite, method for producing the same, busbar, module case, and resinous connector part

Conventional surface roughening plating technology cannot always improve the adhesion between a leadframe and a plating film and it depends on the material used for surface roughening plating. Conventional surface roughening technology by etching can only be used for leadframes made of limited materials. Improved adhesion cannot therefore be achieved between a metal member such as leadframe and a sealing resin. A manufacturing method of a semiconductor device according to one embodiment is to carry out resin sealing using a metal member such as leadframe which has been subjected to alloying treatment of a base material and Zn plated on the surface thereof.

Semiconductor device and method of manufacturing the same

There is provided a wiring material including a core layer made of metal and a clad layer made of metal and a fiber in which the core layer is copper or an alloy containing copper and the clad layer is formed of copper or the alloy containing copper and the fiber having a thermal expansion coefficient lower than that of copper, the wiring material having a stacked structure in which at least one surface of the core layer is closely adhered to the clad layer, and the fiber in the clad layer is arranged so as to be parallel to the surface of the core layer.

Wiring material and semiconductor module using the same

A semiconductor device featuring a semiconductor chip including a MOSFET and having a first main surface and a second, opposing main surface, a source electrode pad and a gate electrode pad over the first main surface, a drain electrode over the second main surface, a source external terminal and a gate external terminal, each having a first main surface electrically connected to the source electrode pad and gate electrode pad of the chip, respectively, and a drain external terminal having a first main surface and a second, opposing main surface and being electrically connected to the second main surface of the chip, each of the source, gate and drain external terminals having second main surfaces thereof in a same plane, and, in a plan view of the external terminals, the gate external terminal has a portion located between the source and drain external terminals in at least one direction.

Mosfet package

A die bonding portion is metallically bonded by well-conductive Cu metal powders with a maximum particle diameter of about 15 &#x3bc;m to 200 &#x3bc;m and adhesive layers of Ag, and minute holes are evenly dispersed in a joint layer. With this structure, the reflow resistance of about 260&#xb0; C. and reliability under thermal cycle test can be ensured without using lead.

Semiconductor apparatus, manufacturing method of semiconductor apparatus, and joint material

There is provided an enameled insulated wire, which includes: a metal conductor; an intermediate layer around the metal conductor, the intermediate layer containing metal oxide particles, the metal oxide particles including at least one oxide selected from a group consisting of zinc oxides, tin oxides, compound oxides of zinc and the metal constituent of the metal conductor, and compound oxides of tin and the metal constituent of the metal conductor, diameter of the metal oxide particles being predominantly from 1 to 50 nm; and an insulation coating around the intermediate layer.

Enameled insulated wire and manufacturing method thereof

In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided.

A semiconductor device featuring a semiconductor chip having a first main surface and a second, opposing main surface and including a MOSFET having source and gate electrodes formed on the first main surface and a drain electrode thereof formed on the second main surface, first and second conductive members acting as lead terminals for the source and gate electrodes, respectively, are disposed over the first main surface, each of the first and second conductive members has a part overlapped with the chip in a plan view, a sealing body sealing the chip and parts of the first and second conductive members such that a part of the first conductive member is projected outwardly from a first side surface of the sealing body and parts of the first and second conductive members are projected outwardly from the opposing second side surface of the sealing body in a plan view.

A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.

Fabrication method for resin-encapsulated semiconductor device

An object of the present invention is to provide a composition of a sintering Ag paste which can metallically bond to a nonprecious metal member with high strength as well as to a precious metal member, in a sintering Ag paste which metallically bonds to a metal at a low temperature, and to provide a bonding method to obtain a joint part having high strength. The sintering Ag paste is a material containing a solution of an organic silver complex that is easily decomposed by heat regardless of an atmosphere. Furthermore, the bonding method includes: metallizing a face of a nonprecious metal with Ag in a non-oxidizing atmosphere in a step prior to sintering Ag particles; and then sintering the Ag particles in an oxidizing atmosphere.

Sintering silver paste material and method for bonding semiconductor chip

A semiconductor device features a semiconductor chip including a MOSFET, a first electrode of the MOSFET disposed on an obverse surface of the chip, a second, control electrode of the MOSFET disposed on the obverse surface, a third electrode of the MOSFET disposed on a second, opposing surface of the chip, first, second, and third conductive members, each having top surface and opposing bottom surface, the first, second, and third conductive members connecting with the first, second, and third electrodes electrically, respectively, a sealing body having top and bottom surfaces and sealing parts of the first, second, and third conductive members, the first conductive member having first, second, and third contiguous portions, the first portion is positioned over the first electrode, the second is positioned between the first and second portions and the third portion is positioned under the obverse surface of the chip.

Semiconductor device

A semiconductor device features a semiconductor substrate with a MOSFET, an electrode for main current of the MOSFET disposed on a first major surface of the substrate, an electrode for control of the MOSFET disposed on the first major surface, a rear plane electrode of the MOSFET disposed on a second, opposing surface of the substrate, and an external connection terminal electrically connected to the rear plane electrode, the external electrode contains a first part, a second part and a third part, the first part is positioned over the rear plane electrode, the third part is positioned below the second major surface and the third part is connected via the second part to the first part.

MOSFET package

A fabrication method for a metal-base/polymer-resin bonded structured body according to the present invention includes the steps of: (1) applying, to a surface of the metal base, a solution containing an organometallic compound decomposable at 350&#xb0; C. or lower; (2) baking the applied solution in an oxidizing atmosphere to form, on the surface of the metal base, a coating containing an oxide of the metal of the organometallic compound; (3) providing the polymer resin on the coating; and (4) hardening the polymer resin to provide the metal-base/polymer-resin bonded structured body.

Metal-resin-boned structured body and resin-encapsulated semiconductor device, and fabrication method for them

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Hitachi, Japan

Ryoichi Kajiwara