Kabushiki Kaisha Toshiba

Nuflare Technology, Inc.

Nec Corporation

Other

Toshiba Machine Co., Ltd.

Kabushiki Kaisha Topcon

Tokyo Kogaku Kikai Kabushiki Kaisha

Ryoichi Hirano

Riki Ogawa

Toru Tojo

Masataka Shiratsuchi

Hideaki Hashimoto

Hideo Tsuchiya

Shusuke Yoshitake

Yoriyuki Ishibashi

Susumu Saito

Hitoshi Suzuki

Shinya Watanabe

Nobutaka Kikuiri

Ikunao Isomura

Kyoji Yamashita

Kazuo Abe

Kazuto Matsuki

Makoto Kanda

Yoshiaki Tsukumo

Yoshiaki Tada

Chosaku Noda

Takeshi Morino

Yoshinori Honguh

Hideaki Okano

Hiromu Inoue

Noriaki Nakayamada

Kazuhiro Nakashima

Norio Uchida

Masaki Toriumi

Hiroaki Shimozono

Kyoichi Tatsuno

Jun Nishida

Katsuhito Ogura

Souji Koikari

Masayuki Masuyama

Akira Kataoka

Toshiya Umeda

Susumu Iida

Satoshi Imura

Teruaki Yamamoto

Shuichiro Fukutome

According to an embodiment, a defect inspection method is performed with a defect inspection apparatus. The defect inspection apparatus is adapted to irradiate a first sample with illumination light to acquire a first sample image, and compare the first sample image to a reference image to inspect a defect. The defect inspection method includes generating the reference image, acquiring the first sample image, setting a defect detection condition using an index based on a result of defect inspection of a second sample different from the first sample, and discriminating a nuisance from a result of comparison between the reference image and the first sample image based on the defect detection condition.

Defect inspection method

There is provided an inspection method including acquiring an inspection image by irradiating a sample with a plurality of electron beams and by simultaneously scanning the sample by the electron beams, performing first correction of a reference image corresponding to the inspection image or second correction of the inspection image based on a plurality of distortions of each of the electron beams and on a position scanned by each of the electron beams in the inspection image, and performing first comparison of the reference image subjected to the first correction with the inspection image or second comparison of the reference image with the inspection image subjected to the second correction.

Inspection method and inspection apparatus

According to one embodiment, an inspection device includes: an image generation device configured to generate a second image corresponding to a first image; and a defect detection device configured to estimate a nonlinear shift based on a plurality of partial region sets, each of the partial region sets including a first partial region in the first image and a second partial region in the second image corresponding to the first partial region, and detect a defect in the second image from the first image.

Inspection device, inspection method, and storage medium

According to one aspect of the present invention, a multiple electron beam inspection apparatus includes a reference image generation circuit generating reference images corresponding to the secondary electron images, in accordance with an image generation characteristic of a secondary electron image by irradiation of one beam; and a correction circuit generating corrected reference images in which, on the basis of deviation information between a figure pattern of the secondary electron image by irradiation of the one beam of the multiple primary electron beams and a figure pattern of a secondary electron image by irradiation of another beam different from the one beam of the multiple primary electron beams, a shape of a figure pattern of a reference image corresponding to the figure pattern of the secondary electron image by the irradiation of the another beam in the reference images is corrected.

Multiple electron beam inspection apparatus and multiple electron beam inspection method

Provided is a pattern inspection method including: irradiating a substrate with an electron beam, a pattern being formed on the substrate; acquiring an inspection image as a secondary electron image of the pattern; setting a pixel value equal to or less than a first threshold value minus a half of a predetermined detection width of the inspection image and a pixel value equal to or more than the first threshold value plus a half of the predetermined detection width of the inspection image to unprocessed; acquiring a difference image between the inspection image having the pixel value having less than the first threshold value minus the half of the predetermined detection width and the pixel value having more of the first threshold value plus the half of the predetermined detection width being set to unprocessed and a reference image of the inspection image; and performing inspection on the basis of the difference image.

Pattern inspection method and pattern inspection apparatus

According to one aspect of the present invention, a pattern inspection apparatus includes: a first sub-pixel interpolation processing circuitry configured to calculate a pixel value of a reference image corresponding to a position of each pixel of the inspection target image by performing an interpolation process using at least one pixel value of the reference image for each shift amount while variably and relatively shifting the inspection target image and the reference image by the unit of a sub-pixel using the reference image corresponding to the inspection target image; and an SSD calculation processing circuitry configured to calculate a sum of squared difference between each pixel value of the inspection target image and a corresponding pixel value of the reference image subjected to a filter process for the each shift amount.

Pattern inspection apparatus and pattern inspection method

An electron beam inspection apparatus includes an acquisition processing circuitry to acquire surface material information presenting a surface material of the substrate and a value of an acceleration voltage of an electron beam; a sequence determination processing circuitry to determine a scan sequence of a plurality of stripe regions on the basis of the surface material of the substrate and the value of the acceleration voltage, the plurality of stripe regions obtained by virtually dividing an inspection region of the substrate in a stripe shape; a secondary electron image acquisition mechanism including a detector for detecting a secondary electron and configured to scan the plurality of stripe regions of the substrate according to a determined scan sequence and to acquire a secondary electron image of the substrate; and a comparison processing circuitry to compare the secondary electron image with a corresponding reference image.

Electron beam inspection apparatus and electron beam inspection method

An electron beam inspection apparatus according to an embodiment includes a stage holding a substrate with a pattern; an electron beam column irradiating the substrate with multiple beams including a plurality of electron beams such that adjacent regions irradiated with the electron beams have an overlap portion therebetween; a first image storage unit storing a first inspection image acquired by irradiating a first inspection region of the substrate with the multiple beams; a second image storage unit storing a second inspection image acquired by irradiating a second inspection region of the substrate with the multiple beams; a correction coefficient storage unit storing a correction coefficient for correcting an image of the overlap portion; an image correction unit correcting an image of the overlap portion using the correction coefficient; and a comparison unit comparing the first inspection image with the second inspection image.

A pattern inspection apparatus includes: an optical image acquiring unit configured to acquire optical image data of a target object on which each of a plurality of identical patterns is respectively formed at a respective corresponding position of a plurality of forming positions with distortion; a cut-out unit configured to cut out a plurality of partial optical image data from the optical image data; a correction unit configured to correct positions of the plurality of partial optical image data by using distortion information from which each amount of distortion of the plurality of identical patterns respectively formed at the respective corresponding position of the plurality of forming positions on the target object can be acquired; and a comparison unit configured to compare a plurality of corrected partial optical image data against each other on a pixel to pixel basis.

A workpiece inspection apparatus includes a measured image generator unit configured to measure a pattern of a workpiece and generate a measured image; and a comparator unit configured to compare the measured image to a fiducial image, wherein said measured image generator unit includes a light-receiving device having an interconnection of two or more time delay integration (TDI) sensors each being arranged by two or more line sensors each being arranged by two or more pixels, for generating as the measured image an average value of pixel values excluding an abnormal pixel value from pixels of each TDI sensor with respect to a position of the pattern of the workpiece.

Ultrafine lithography pattern inspection using multi-stage TDI image sensors with false image removability

A reticle defect inspection apparatus that suppresses deterioration of optical components resulting from luminescent spots generated by an integrator and can sustain a defect inspection with high precision for a long time is provided. The reticle defect inspection apparatus is a reticle defect inspection apparatus for inspecting for defects on a reticle using a pattern image obtained by irradiating the reticle on which a pattern is formed with light. And the apparatus includes an illuminating optical system for irradiating the reticle with an inspection light and a detecting optical system for detecting a pattern image of the reticle irradiated with the inspection light, wherein the illuminating optical system comprises an integrator for equalizing illumination distribution of the inspection light and a moving mechanism for enabling the integrator to slightly move in a direction perpendicular to an optical axis of the integrator.

Reticle defect inspection apparatus and inspection method using thereof

A reticle defect inspection apparatus that controls damage of a reticle by irradiation with an inspection light when the reticle is caused to be at rest is provided. The reticle defect inspection apparatus is a reticle defect inspection apparatus for inspecting for defects on a reticle using a pattern image obtained by irradiating the reticle on which a pattern is formed with light. The reticle defect inspection apparatus has a dose monitoring part for measuring a dose of the light to the reticle, a comparing part for comparing, after calculating accumulated irradiation from the dose measured by the dose monitoring part, the accumulated irradiation with a preset threshold, and a stop mechanism for stopping irradiation of the reticle with the light when, as a result of the comparison, the accumulated irradiation exceeds the threshold.

Reticle defect inspection apparatus and reticle defect inspection method

A pattern forming apparatus includes a drawing chamber having a drawing substrate on which an original pattern is drawn, a first temperature control unit having a first temperature regulator to make the temperature of the drawing chamber constant, and a constant-temperature member arranged near the drawing substrate. The pattern forming apparatus further includes a second temperature control unit having a second temperature regulator. The second temperature control unit is configured to control the set temperature of the constant-temperature member independently such that the temperature of the drawing substrate becomes substantially constant when the original pattern is drawn.

Apparatus and method for forming pattern

According to one embodiment of the present invention, the present invention may provide a temperature measuring method in a pattern drawing apparatus having a drawing chamber for drawing a pattern on a substrate to be transferred inside, a stage installed inside the drawing chamber, a standby chamber connected to the drawing chamber, and a thermostatic device installed inside the standby chamber, characterized in that a dummy substrate having a temperature measuring device and a recording device for recording the temperature measured by the temperature measuring device is transferred to the thermostatic device, then transferred into the drawing chamber, and then put on the stage, thus the temperature history of the dummy substrate in the transfer route from the thermostatic device to the stage is measured by the temperature measuring device and recorded in the recording device.

Temperature measuring method in pattern drawing apparatus

Growing community of inventors

Tokyo, Japan

Ryoichi Hirano