Sandisk Technologies Inc.

Ryoichi Ehara

Masanori Tsutsumi

Youko Furihata

Tong Zhang

Seiji Shimabukuro

Zhenyu Lu

Yoshitaka Otsu

Kensuke Yamaguchi

Kota Funayama

Shigehisa Inoue

Yuji Fukano

Tadashi Nakamura

Koichi Ito

Yusuke Ikawa

Naoto Hojo

Takeshi Kawamura

Kei Nozawa

Yoshinobu Tanaka

Junji Oh

Yashushi Doda

Hiromasa Susuki

Zhiwei Chen

A multi-tier three-dimensional memory array includes multiple alternating stacks of insulating layers and electrically conductive layers that are vertically stacked. Memory stack structures including memory films and semiconductor channels extend through the alternating stacks. The alternating stacks are formed as alternating stacks of insulating layers and sacrificial material layers, and are subsequently modified by replacing the sacrificial material layers with electrically conductive layers. Structural support during replacement of the sacrificial material layers with the electrically conductive layers is provided by the memory stack structures and dielectric support pillar structures. The dielectric support pillar structures may be formed only for a first-tier structure including a first-tier alternating stack of first insulating layers and first spacer material layers, or may vertically extend over multiple tiers. The dielectric support pillar structures may be formed before or after formation of stepped surfaces in the alternating stack.

Multi-tier three-dimensional memory device with dielectric support pillars and methods for making the same

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, the alternating stack containing a memory array region and a terrace region. Memory stack structures containing a memory film and a vertical semiconductor channel extend through the memory array region of the alternating stack. Support pillar structures extending through the terrace region of the alternating stack. The support pillar structures have different heights from each other.

Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof

A method of forming a monolithic three-dimensional memory device includes forming a first alternating stack over a substrate, forming an insulating cap layer, forming a first memory opening through the insulating cap layer and the first alternating stack, forming a sacrificial pillar structure in the first memory opening, forming a second alternating stack, forming a second memory opening, forming an inter-stack memory opening, forming a memory film and a first semiconductor channel layer in the inter-stack memory opening, anisotropically etching a horizontal bottom portion of the memory film and the first semiconductor channel layer to expose the substrate at the bottom of the inter-stack memory opening such that damage to portions of the first semiconductor channel layer and the memory film located adjacent to the insulating cap layer is reduced or avoided, and forming a second semiconductor channel layer in contact with the exposed substrate in the inter-stack memory opening.

Three-dimensional memory device containing annular etch-stop spacer and method of making thereof

Growing community of inventors

Yokkaichi, Japan

Ryoichi Ehara