National Institute of Advanced Industrial Science and Technology

Ryoichi Akimoto

Hiroshi Ishikawa

Masanori Nagase

In the production of optical devices or the like utilizing an intersubband transition of a coupled quantum well, a quantum well structure having strong coupling is provided. In addition, a coupled well structure of excellent productivity capable of avoiding thinning of coupling barrier layer for strengthening the coupling is provided. In the semiconductor coupled well structure of the present invention, a coupled quantum well structure disposed on the semiconductor single crystal substrate includes a coupling barrier layerdisposed between two or more quantum well layersand, wherein the coupling barrier layerhas an energy barrier that is smaller than an excitation level (Eand E) and is larger than a ground level (Eand E).

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Tsukuba, Japan

Ryoichi Akimoto