National Institute of Advanced Industrial Science and Technology

Photonics Electronics Technology Research Association

Ryohei Takei

Masahiko Mori

Youichi Sakakibara

Toshihiro Kamei

Junichi Fujikata

Makoto Okano

An electro-optical modulator includes a substrate; an optical waveguide formed of a silicon-containing i-type amorphous semiconductoron the substrate; and a silicon-containing p-type semiconductor layerand a silicon-containing n-type semiconductor layerarranged apart from each other with the silicon-containing optical waveguide formed of an i-type amorphous semiconductorinterposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layerand/or silicon-containing n-type semiconductor layerarea crystalline semiconductor layer.

Electro-optical modulator

An optical semiconductor device in which a first optical waveguidecomprising a silicon-containing amorphous semiconductor layer and a second optical waveguidecontaining a silicon-containing i-type semiconductor layer as a constituent element are disposed in different layers in a range in which optical interaction can occur. An electro-optical modulatorhaving a pin junction structure comprising a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layeris provided to at least a portion of the second optical waveguide, and the index of refraction of the second optical waveguide is varied by the electro-optical modulator, whereby light waves propagated through the first optical waveguide are modulated.

Optical semiconductor device

An interlayer light wave coupling device includes a substrate; a first core disposed on the substrate and having a first acute structure; a third core spatially set apart from the first core and having a second acute structure; and a second core disposed between the first core and the third core and having a smaller index of refraction than the first core and the third core. The acute structures of the first core and the third core are disposed so as to have no overlap as viewed from above.

Interlayer light wave coupling device

A semiconductor pointed structure formed at an end portion of the core structure of a semiconductor photonic wire waveguide has a sloped side wall on at least one of the sides that constitute the pointed structure. The semiconductor pointed structure decreases in width and thickness towards the distal end. A method for fabrication of the structure is also disclosed.

Growing community of inventors

Ibaraki, Japan

Ryohei Takei