Toshiba Memory Corporation

Kioxia Corporation

Kabushiki Kaisha Toshiba

Ryohei Kitao

Atsuko Sakata

Takeshi Ishizaki

Satoshi Wakatsuki

Kei Watanabe

Shinichi Nakao

Takeshi Iwasaki

Shunsuke Ochiai

Hiroshi Tomita

Toshihiko Nagase

Yasuhito Yoshimizu

Masayuki Kitamura

Junichi Wada

Yohei Sato

Hisashi Okuchi

Toshiyuki Sasaki

Akifumi Gawase

Daisuke Ikeno

Katsuyoshi Komatsu

Tomotaka Ariga

Kazuhito Furumoto

Takanori Usami

Yuta Konno

Kohei Nagata

A film forming apparatus according to an embodiment includes: a process chamber forming a film on a substrate; an abatement device detoxifying a first exhaust gas exhausted from the process chamber; a first supply pipe for supplying a gas containing water to the process chamber; a first vacuum pump provided in a first flow path of the first exhaust gas between the process chamber and the abatement device; a second vacuum pump provided in the first flow path between the first vacuum pump and the abatement device; and a first detector provided in the first flow path between the second vacuum pump and the abatement device and capable of detecting a hydrogenated gas.

Film forming apparatus and film forming method

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Method for manufacturing semiconductor device

A storage device according to embodiments includes a first conductive layer; a second conductive layer; a resistance change element provided between the first conductive layer and the second conductive layer; and an intermediate layer provided in any one of a position between the resistance change element and the first conductive layer and a position between the resistance change element and the second conductive layer, the intermediate layer containing at least one element of silicon (Si) and germanium (Ge), tellurium (Te), and aluminum (Al).

Storage device

According to one embodiment, a semiconductor device includes a stacked body, a semiconductor body, and a stacked film. The stacked body includes a plurality of tungsten layers and a plurality of alloy layers of tungsten and molybdenum. At least portions of the tungsten layers are stacked with an air gap interposed. The alloy layers are provided on surfaces of the tungsten layers opposing the air gap. The semiconductor body extends in a stacking direction through the stacked body. The stacked film is provided between the semiconductor body and the tungsten layers. The stacked film includes a charge storage portion.

Semiconductor device and method for manufacturing same

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Mie, Japan

Ryohei Kitao